Anantharaman, M R; Saravanan, S; Joseph, Mathai C; Venkatachalam, S; Avasthi, D K; Singh, F(Elsevier, November 15, 2005)
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Abstract:
Conjugated polymers in the form of thin films play an important role in the field of materials science due to their interesting properties. Polymer
thin films find extensive applications in the fabrication of devices, such as light emitting devices, rechargeable batteries, super capacitors, and
are used as intermetallic dielectrics and EMI shieldings. Polymer thin films prepared by plasma-polymerization are highly cross-linked, pinhole
free, and their permittivity lie in the ultra low k-regime. Electronic and photonic applications of plasma-polymerized thin films attracted the
attention of various researchers. Modification of polymer thin films by swift heavy ions is well established and ion irradiation of polymers can
induce irreversible changes in their structural, electrical, and optical properties. Polyaniline and polyfurfural thin films prepared by RF plasmapolymerization
were irradiated with 92MeV silicon ions for various fluences of 1×1011 ions cm−2, 1×1012 ions cm−2, and 1×1013 ions cm−2.
FTIR have been recorded on the pristine and silicon ion irradiated polymer thin films for structural evaluation. Photoluminescence (PL) spectra
were recorded for RF plasma-polymerized thin film samples before and after irradiation. In this paper the effect of swift heavy ions on the structural
and photoluminescence spectra of plasma-polymerized thin films are investigated.