Soloman, M A; Dr. Philip, Kurian(Cochin University of Science & Technology, July , 2002)
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Abstract:
In the present study the preparation and characterisation of rubber ferrite
composites (RFC) containing barium ferrite (BaF) and strontium ferrite (SrF) have
been dealt with. The incorporation of the hard ferrites into natural and nitrile rubber
was carried out according to a specific recipe for various loadings of magnetic
fillers. For this, the ferrite materials namely barium ferrite and strontium ferrite
having the general formula MO6Fe2O3 have been prepared by the conventional
ceramic techniques. After characterisation they were incorporated into the natural
and nitrile rubber matrix by mechanical method. Carbon black was also incorporated at different loading into the rubber ferrite composites to study its
effect on various properties. The cure characteristics, mechanical, dielectric and
magnetic properties of these composites were evaluated. The ac electrical
conductivity of both the ceramic ferrites and rubber ferrite composites were also
calculated using a simple relation. The investigations revealed that the rubber ferrite composites with the
required dielectric and magnetic properties can be obtained by the incorporation of
ferrite fillers into the rubber matrix, without compromising much on the
processability and mechanical properties.
Description:
Department of Polymer Science and Rubber Technology, Cochin
University of Science and Technology
Subin Thomas; Dr. K. Rajeev Kumar(Cochin University of Science and Technology, November 11, 2015)
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Abstract:
The semiconductor industry's urge towards faster, smaller and cheaper
integrated circuits has lead the industry to smaller node devices. The integrated
circuits that are now under volume production belong to 22 nm
and 14 nm technology nodes. In 2007 the 45 nm technology came with
the revolutionary high- /metal gate structure. 22 nm technology utilizes
fully depleted tri-gate transistor structure. The 14 nm technology is a
continuation of the 22 nm technology. Intel is using second generation
tri-gate technology in 14 nm devices. After 14 nm, the semiconductor industry
is expected to continue the scaling with 10 nm devices followed by
7 nm. Recently, IBM has announced successful production of 7 nm node
test chips. This is the fashion how nanoelectronics industry is proceeding
with its scaling trend.
For the present node of technologies selective deposition and selective removal
of the materials are required. Atomic layer deposition and the
atomic layer etching are the respective techniques used for selective deposition
and selective removal. Atomic layer deposition still remains as
a futuristic manufacturing approach that deposits materials and lms in
exact places. In addition to the nano/microelectronics industry, ALD is
also widening its application areas and acceptance. The usage of ALD
equipments in industry exhibits a diversi cation trend. With this trend,
large area, batch processing, particle ALD and plasma enhanced like ALD
equipments are becoming prominent in industrial applications. In this
work, the development of an atomic layer deposition tool with microwave
plasma capability is described, which is a ordable even for lightly funded
research labs.
Rinku Mariam, Thomas; Dr.George, K E; Dr.Mathew, K T; Dr.Prathapan, S(Cochin University of Science & Technology, May , 2005)
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Abstract:
The thesis deals with the preparation and dielectric characterization of
Poly aniline and its analogues in ISM band frequency of 2-4 GHz that includes part
of the microwave region (300 MHz to 300 GHz) of the electromagnetic spectrum
and an initial dielectric study in the high frequency [O.05MHz-13 MHz].
PolyaniIine has been synthesized by an in situ doping reaction under different
temperature and in the presence of inorganic dopants such as HCl H2S04, HN03,
HCl04 and organic dopants such as camphorsulphonic acid [CSA],
toluenesulphonic acid {TSA) and naphthalenesulphonic acid [NSA]. The variation
in dielectric properties with change in reaction temperature, dopants and
frequency has been studied. The effect of codopants and microemulsions on the dielectric properties has also been studied in the ISM band. The ISM band of
frequencies (2-4 GHz) is of great utility in Industrial, Scientific and Medical (ISM)
applications. Microwave heating is a very efficient method of heating dielectric
materials and is extensively used in industrial as well as household heating
applications.
Description:
Department of
Polymer Science and Rubber Technology,Cochin University of Science and
Technology