Palson,T I; Dr.Joy, George(Cochin University Of Science And Technology, February 16, 1987)
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Abstract:
The work reported in this thesis is the preparation,
and the structural, electrical and optical properties
of reactively evaporated lead sulphide and tin telluride
thin films. The three temperature method had been used
for the preparation of these semiconductor thin films.
In this preparation technique constituent elements are
evaporated from separate sources with the substrate kept
at a particular temperature. when one of the constituent
element is a gas near room temperature, the method is
often called reactive evaporation. It has been found for
many materials that a stoichiometric interval exists with
a limited range of flux and substrate temperature. Usually
this technique is used for the preparation of thin films of
high melting point compounds or of materials which decompose
during evaporation. Tin telluride and lead sulphide are
neither high melting point materials nor do they decompose
on melting. But even than reactive evaporation offers the
possibility of changing the ratios of the flux of the constituent
elements within a wide range and studying its
effect on the properties of the films
Description:
Department of Physics, Cochin
University of Science and Technology