Ajith Prasad, K C; Nampoori, V P N; Vallabhan, C P G(Elsevier, 1996)
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Abstract:
Photoemission optogalvanaic (POG) effect has been observed by irradiating copper target electrode, in a nitrogen discharge cell using 1.06 μm and frequency doubled 532 nm Nd:YAG laser pulse. Measurement of the nature of the variation of POG signal strength with 532 nm laser fluence confirms the two photon induced photoelectric emission from copper. However, using 1.06 μm laser pulses thermally assisted photoemission is observed.
Shali, N B; Sugunan, S(Springer Netherlands, 2007)
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Abstract:
Lanthana modified sol-gel titania is prepared
through particulate sol-gel route and the physico-chemical
characterizations of the prepared systems were done using
X-Ray diffration, EDX, BET surface area-pore volume measurements
and TG-DTG analysis. Benzophenone was observed
to be the sole product in the TiO2 photocatalyzed
oxidation of benzhydrol in oxygen purged acetonitrile. The
influence of various parameters, like irradiation time, amount
of catalyst, concentration of the catalyst and other factors on
the photocatalytic oxidation has been investigated. The proposed
mechanism envisages the involvement of a superoxide
radical anion.
ZnO micro particles in the range 0.4-0.6 μm were synthesized by microwave irradiation
method. The XRD analysis reveals that the sample is in the wurtzite phase with orientation
along the (101) plane. SAED pattern of the sample reveals the single crystalline nature of
the micro grains. TEM images show the formation of cylindrical shaped ZnO micro
structures with hexagonal faces. The optical phonon modes were slightly shifted in the
Raman spectrum,attributed to the presence of various crystalline defects and laser induced
local heating at the grain boundaries. A broad transmission profile was observed in the
FTIR spectrum from 1550-3400 cm-1 which falls in the atmospheric transparency window
region. PL spectrum centered at 500 nm with a broad band in the region 420-570 nm
comprised of different emission peaks attributed to transition between defect levels.
Various emission levels in the sample were expliained with a band diagram
Description:
Journal of Optoelectronics and Biomedical Materials Vol. 4, Issue 1, January-March 2012, p. 1 - 7
Junaid, Bushiri M; Saji, Chacko; Vaidyan, V K(IOP Publishing LTD, October 20, 2006)
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Abstract:
SnO2 nanocrystalline thin films were deposited on glass substrates by the
spray pyrolysis technique in air atmosphere at 375, 400, 425, 450 and
500 ◦C substrate temperatures. The obtained films were characterized by
using XRD. The room temperature photoluminescence (PL) spectra of these
films have near band edge (NBE) and deep level emission under the
excitation of 325 nm radiation. NBE PL peak intensity decreased
consistently with temperatures for samples prepared at 400, 450 and 500 ◦C,
while a sudden reduction in intensity is observed for the sample prepared at
425 ◦C. A similar effect was observed for the optical transmittance spectra.
These effects can be explained on the basis of the change in population of
oxygen vacancies as indicated by the change in a values
Lyjo, Joseph K; Dayas, K R; Soniya, Damodar; Bindu, Krishnan; Krishnankutty, K; Nampoori, V P N; Radhakrishnan, P(Elsevier, December 15, 2008)
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Abstract:
The laser-induced luminescence studies of the rare earth titanates (R2Ti2O7) (R = La, Nd and Gd) using 355 nm radiation from an Nd:YAG laser are presented. These samples with submicron or nanometer size are prepared by the self-propagating high temperature synthesis (SHS) method and there is no known fluorescence shown by these rare earths in the visible region. Hence, the luminescence transitions shown by the La2Ti2O7 near 610 nm and Gd2Ti2O7 near 767 nm are quite interesting. Though La3+ ions with no 4f electrons have no electronic energy levels that can induce excitation and luminescence processes in the visible region, the presence of the Ti3+ ions leads to luminescence in this region.
Anantharaman, M R; Saravanan, S; Joseph, Mathai C; Venkatachalam, S; Avasthi, D K; Singh, F(Elsevier, November 15, 2005)
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Abstract:
Conjugated polymers in the form of thin films play an important role in the field of materials science due to their interesting properties. Polymer
thin films find extensive applications in the fabrication of devices, such as light emitting devices, rechargeable batteries, super capacitors, and
are used as intermetallic dielectrics and EMI shieldings. Polymer thin films prepared by plasma-polymerization are highly cross-linked, pinhole
free, and their permittivity lie in the ultra low k-regime. Electronic and photonic applications of plasma-polymerized thin films attracted the
attention of various researchers. Modification of polymer thin films by swift heavy ions is well established and ion irradiation of polymers can
induce irreversible changes in their structural, electrical, and optical properties. Polyaniline and polyfurfural thin films prepared by RF plasmapolymerization
were irradiated with 92MeV silicon ions for various fluences of 1×1011 ions cm−2, 1×1012 ions cm−2, and 1×1013 ions cm−2.
FTIR have been recorded on the pristine and silicon ion irradiated polymer thin films for structural evaluation. Photoluminescence (PL) spectra
were recorded for RF plasma-polymerized thin film samples before and after irradiation. In this paper the effect of swift heavy ions on the structural
and photoluminescence spectra of plasma-polymerized thin films are investigated.
Poly(6-tert-butyl-3,4-dihydro-2H-1,3-benzoxazine) was synthesized by
thermally activated cationic ring opening polymerization. The structure of the
polymer was confirmed by spectral and thermal studies. The highest occupied
molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) were
estimated using cyclic voltammetry and optical absorption. Modulated photocurrent
measurement technique was employed to study the spectral and field dependence of
photocurrent. Photocurrent of the order of 1.5 micro A/m2 was obtained for polymer at a
biasing electric field of 40 V/mico m.
Annieta, Philip K; Lyjo, Joseph K; Litty, Irimpan; Radhakrishnan, P; Nampoori, V P N(Department of Photonics, 2004)
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Abstract:
Laser induced photoacoustic (PA) technique is used in the study of photostability of polymethyl
methacrylate (PMMA) films doped with Rhodamine 6G -Rhodamine B dye system. Energy transfer from a donor
molecule to an acceptor molecule in a dye mixture affects the output of the dye system. Details of investigations on
the role of laser power, modulation frequency and the irradiation wavelength on the photosensitivity of the dye
mixture doped PMMA films are presented.
We have performed thermal diffusion measurements
of nanofluid containing gold and rhodamine 6G dye
in various ratios. At certain concentrations, gold is nearly
four times more efficient than water in dissipating small
temperature fluctuations in a medium, and therefore it will
find applications as heat transfer fluids. We have employed
dual-beam mode-matched thermal lens technique for the
present investigation. It is a sensitive technique in measuring
photothermal parameters because of the use of a lowpower,
stabilized laser source as the probe. We also present
the results of fluorescence measurements of the dye in the
nanogold environment.
Girijavallabhan, C P; Radhakrishnan, P; Nampoori, V P N; Sajan, D George(Physical Review, American Physical Society, October 16, 2003)
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Abstract:
In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double
epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer
grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive
photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the
phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that
the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the
doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped
samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results
are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process
involved in the propagation of phonons.
Radhakrishnan, P; V P N Nampoori; Girijavallabhan, C P; Sajan, D George(Physical Review, American Physical Society, 2003)
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Abstract:
In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double
epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer
grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive
photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the
phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that
the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the
doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped
samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results
are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process
involved in the propagation of phonons
V P N Nampoori; Radhakrishnan, P; Girijavallabhan, C P; Sajan, D George(Physical Review, American Physical Society, 2003)
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Abstract:
In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double
epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer
grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive
photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the
phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that
the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the
doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped
samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results
are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process
involved in the propagation of phonons
Nibu, A George; Vallabhan, C P G; Nampoori, V P N; Radhakrishnan, P(Optical Society of America, August , 2002)
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Abstract:
Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.
George, S D; Radhakrishnan, P; Nampoori, V P N; Vallabhan, C P G(Springer-Verlag, 2003)
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Abstract:
Laser induced transverse photothermal deflection
technique has been employed to determine the thermal parameters
of InP doped with Sn, S and Fe as well as intrinsic
InP. The thermal diffusivity values of these various samples
are evaluated from the slope of the curve plotted between the
phase of photothermal deflection signal and pump-probe offset.
Analysis of the data shows that heat transport and hence
the thermal diffusivity value, is greatly affected by the introduction
of dopant. It is also seen that the direction of heat flow with
respect to the plane of cleavage of semiconductor wafers influences
the thermal diffusivity value. The results are explained in
terms of dominating phonon assisted heat transfer mechanism in semiconductors.
Girijavallabhan, C P; Radhakrishnan, P; V P N Nampoori; Kumar, G A; Thomas, J; Unnikrishnan, N V; George, N(Journal of Materials Science ,Kluwer Academic Publishers, 2000)
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Abstract:
Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped
glass matrix are reported for the first time. Absorption spectral measurements of H2Pc,
MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been
made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV
region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other
important optical and physical parameters viz. refractive index (n), molar extinction
coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ),
polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported
Radhakrishnan, P; Nampoori, V P N; Girijavallabhan, C P; Kumar, G A; Thomas, J; Unnikrishnan, N V; George, N(Journal of Materials Science ,Kluwer Academic Publishers, 2000)
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Abstract:
Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped
glass matrix are reported for the first time. Absorption spectral measurements of H2Pc,
MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been
made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV
region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other
important optical and physical parameters viz. refractive index (n), molar extinction
coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ),
polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported.
Nampoori, V P N; Radhakrishnan, P; Girijavallabhan, C P; Kumar, G A; Thomas, J; Unnikrishnan, N V; George, N(Journal of Materials Science ,Kluwer Academic Publishers, 2000)
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Abstract:
Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped
glass matrix are reported for the first time. Absorption spectral measurements of H2Pc,
MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been
made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV
region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other
important optical and physical parameters viz. refractive index (n), molar extinction
coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ),
polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported.
Santhosh Kumar, G(Cochin University of Science And Technology, September 29, 2013)
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Abstract:
Science is search for the laws of underlying phenomena of the nature. Engineering
constructs the nature as we wish. Interestingly the huge engineering infrastructure like world
wide web has grown in such a complex structure such that we need to see the fundamental
science behind the structure and behaviour of these networks. This talk covers the science
behind the complex networks like web, biological, social etc. The talk aim to discuss the
basic theories that govern the static as well as the dynamics of such interesting networks