Photothermal deflection measurement on heat transport in GaAs epitaxial layers

Dyuthi/Manakin Repository

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

Show full item record

Title: Photothermal deflection measurement on heat transport in GaAs epitaxial layers
Author: Girijavallabhan, C P; Radhakrishnan, P; V P N Nampoori; Sajan, D George
Abstract: In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.
URI: http://dyuthi.cusat.ac.in/purl/1808
Date: 2003-10-16


Files in this item

Files Size Format View
Photothermal de ... GaAs epitaxial layers.pdf 216.6Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record

Search Dyuthi


Advanced Search

Browse

My Account