Sajan, D George; Aneeshkumar, B; Radhakrishnan, P; Nampoori, V P N; Vallabhan, C P G(Society of Photo-Optical Instrumentation Engineers, 2004)
[+]
[-]
Abstract:
An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.
Sajan, D George; Dilna, S; Prasanth, R; Radhakrishnan, P; Vallabhan, C P G; Nampoori, V P N(Society of Photo-Optical Instrumentation Engineers., 2003)
[+]
[-]
Abstract:
We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho’s theory of the PA effect. The amplitude of the PA signal gives information about various heat generation mechanisms in semiconductors. The experimental data obtained from the measurement of the PA signal as a function of modulation frequency in a heat transmission configuration were fitted with the phase of PA signal obtained from the theoretical model evaluated by considering four parameters—viz., thermal diffusivity, diffusion coefficient, nonradiative recombination time, and surface recombination velocity—as adjustable parameters. It is seen from the analysis that the photoacoustic technique is sensitive to the changes in the surface states depend on the doping concentration. The study demonstrates the effectiveness of the photoacoustic technique as a noninvasive and nondestructive method to measure and evaluate the thermal and transport properties of epitaxial layers.
Nampoori, V P N; Radhakrishnan, P; Girijavallabhan, C P; Sajan, D George(Journal of Physics D : Applied Physics, Institute of Physics Publishing, April 2, 2003)
[+]
[-]
Abstract:
An open photoacoustic cell operating in the low range of chopping
frequency has been employed to evaluate the thermal diffusivity values of
intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is
calibrated by the evaluation of thermal diffusivity value of pure Si and
GaAs. The present investigation shows that doped samples show a reduced
value for thermal diffusivity compared to intrinsic sample. From the
analysis of data it is also seen that nature of dopant clearly influences the
thermal diffusivity value of semiconductors. The results are explained in
terms of phonon assisted heat transfer mechanism in semiconductors
Sajan, D George; Rajesh, Komban; Warrier, K G K; Radhakrishnan, P; Nampoori, V P N; Vallabhan, C P G(Taylor & Francis, February , 2010)
[+]
[-]
Abstract:
A laser-induced photoacoustic technique was employed to investigate
thermal transport through nanocrystalline CePO4 samples prepared via the
sol–gel route. Evaluation of thermal diffusivity was carried out using the
one-dimensional model of Rosencwaig and Gersho for the reflection
configuration of the photoacoustic method. Structural analyses of samples
revealed that they are nanoporous in nature, possessing micron-sized
grains. Analysis of results shows that thermal diffusivity value varies with
sintering temperature. Results are explained in terms of the variation in
porosity with sintering temperature and the effects of various scattering
mechanisms on the propagation of phonons through the nanoporous
ceramic matrix. Further analyses confirm that apart from porosity, grain
boundary resistance and interface thermal resistance influence the effective
value of thermal diffusivity of the samples under investigation.