The Effect of Dopants on the Microwave Dielectric Properties of Ba (Mg 0.33 Ta 0.67) O3 Ceramics

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The Effect of Dopants on the Microwave Dielectric Properties of Ba (Mg 0.33 Ta 0.67) O3 Ceramics

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dc.contributor.author Mohanan, T
dc.date.accessioned 2008-10-23T04:21:24Z
dc.date.available 2008-10-23T04:21:24Z
dc.date.issued 2005-08-22
dc.identifier.other JOURNAL OF APPLIED PHYSICS 98, 094114 (2005), DOI: 10.1063/1.2127124
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/964
dc.description.abstract The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) is investigated. It is found that dopants such as Sb2O5, MnO, ZrO2, WO3, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed. en_US
dc.language.iso en en_US
dc.publisher American Institute of Physics en_US
dc.subject Dopants en_US
dc.subject Ionic radii en_US
dc.subject Densification en_US
dc.subject Microwave dielectric properties en_US
dc.subject Cryogenic temperatures en_US
dc.title The Effect of Dopants on the Microwave Dielectric Properties of Ba (Mg 0.33 Ta 0.67) O3 Ceramics en_US
dc.type Working Paper en_US


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