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Abstract:
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ZnGa2O4 spinel is a promising new UV transparent electronic conductor. Enhancing the electrical conductivity of this
potential oxide phosphor can make it a promising transparent conducting oxide. In this paper, we have investigated the
effects of processing and doping on the conductivity of semiconducting ZnGa2O4, particularly thin films. Crystalline
zinc gallate thin films have been deposited on fused quartz substrates employing the pulsed laser deposition (PLD)
technique at room temperature for an oxygen partial pressure of 0.1 Pa (0.001mbar). The films were found to be UV
transparent, the band gap of which shifted to 4.75eV on hydrogen annealing. The band gap of the oxygen stoichiometric
bulk powder samples (4.55eV) determined from diffuse reflection spectrum (DRS) shifted to 4.81eV on reduction in a
hydrogen atmosphere. The electrical conductivity improved when Sn was incorporated into the ZnGa2O4 spinel. The
conductivity of ZnGa2O4:Sn thin films was further improved on reduction. |