Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by
12 pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at
13 different pressures. These heterojunctions were found to be rectifying with a
14 maximum forward-to-reverse current ratio of about 1,000 in the applied
15 voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was
16 found to depend on the ambient oxygen pressure during the growth of the ZnO
17 film. The current density–voltage characteristics and the variation of the
18 series resistance of the n-ZnO/p-Si heterojunctions were found to be in line
19 with the Anderson model and Burstein-Moss (BM) shift.
Stable, OH free zinc oxide (ZnO) nanoparticles were synthesized by hydrothermal method by varying the
growth temperature and concentration of the precursors. The formation of ZnO nanoparticles were confirmed by x-ray
diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) studies. The
average particle size have been found to be about 7-24 nm and the compositional analysis is done with inductively
coupled plasma atomic emission spectroscopy (ICP-AES). Diffuse reflectance spectroscopy (DRS) results shows that the
band gap of ZnO nanoparticles is blue shifted with decrease in particle size. Photoluminescence properties of ZnO
nanoparticles at room temperature were studied and the green photoluminescent emission from ZnO nanoparticles can
originate from the oxygen vacancy or ZnO interstitial related defects.