Radhakrishnan, P; Nampoori, V P N; Girijavallabhan, C P; George, N A; Paul, T; Sebastian,M T(Journal of Materials Science Letters,Kluwer Academic Publishers, 2000)
Radhakrishnan, P; V P N Nampoori; Girijavallabhan, C P; Sajan, D George(Physical Review, American Physical Society, 2003)
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Abstract:
In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double
epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer
grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive
photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the
phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that
the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the
doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped
samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results
are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process
involved in the propagation of phonons
Radhakrishnan, P; V P N Nampoori; Girijavallabhan, C P; Sajan, D George(Journal of Physics D : Applied Physics, Institute of Physics Publishing, April 2, 2003)
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Abstract:
An open photoacoustic cell operating in the low range of chopping
frequency has been employed to evaluate the thermal diffusivity values of
intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is
calibrated by the evaluation of thermal diffusivity value of pure Si and
GaAs. The present investigation shows that doped samples show a reduced
value for thermal diffusivity compared to intrinsic sample. From the
analysis of data it is also seen that nature of dopant clearly influences the
thermal diffusivity value of semiconductors. The results are explained in
terms of phonon assisted heat transfer mechanism in semiconductors