Preparation and characterisation of certain II-VI, I-III-VI2 semiconductor thin films and transparent conducting oxides

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Preparation and characterisation of certain II-VI, I-III-VI2 semiconductor thin films and transparent conducting oxides

Show simple item record Aldrin, Antony Jayaraj, M K 2008-08-18T07:07:08Z 2008-08-18T07:07:08Z 2004-10
dc.description.abstract There is an increasing demand for renewable energies due to the limited availability of fossil and nuclear fuels and due to growing environmental problems. Photovoltaic (PV) energy conversion has the potential to contribute significantly to the electrical energy generation in the future. Currently, the cost for photovoltaic systems is one of the main obstacles preventing production and application on a large scale. The photovoltaic research is now focused on the development of materials that will allow mass production without compromising on the conversion efficiencies. Among important selection criteria of PV material and in particular for thin films, are a suitable band gap, high absorption coefficient and reproducible deposition processes capable of large-volume and low cost production. The chalcopyrite semiconductor thin films such as Copper indium selenide and Copper indium sulphide are the materials that are being intensively investigated for lowering the cost of solar cells. Conversion efficiencies of 19 % have been reported for laboratory scale solar cell based on CuInSe2 and its alloys. The main objective of this thesis work is to optimise the growth conditions of materials suitable for the fabrication of solar cell, employing cost effective techniques. A typical heterojunction thin film solar cell consists of an absorber layer, buffer layer and transparent conducting contacts. The most appropriate techniques have been used for depositing these different layers, viz; chemical bath deposition for the window layer, flash evaporation and two-stage process for the absorber layer, and RF magnetron sputtering for the transparent conducting layer. Low cost experimental setups were fabricated for selenisation and sulphurisation experiments, and the magnetron gun for the RF sputtering was indigenously fabricated. The films thus grown were characterised using different tools. A powder X-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive X-ray analysis (EDX) and scanning electron microscopy i (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UV-Vis-NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using the two probe and four probe electrical measurements. Nature of conductivity of the films was determined by thermoprobe and thermopower measurements. The deposition conditions and the process parameters were optimised based on these characterisations. en_US
dc.language.iso en_US en_US
dc.publisher Department of Physics en_US
dc.subject Photovoltaic (PV) energy conversion en_US
dc.subject chalcopyrite semiconductor thin films en_US
dc.subject Copper indium selenide en_US
dc.subject heterojunction thin film en_US
dc.subject selenisation en_US
dc.subject sulphurisation en_US
dc.subject energy dispersive X-ray analysis (EDX) en_US
dc.subject II-VI, I-III-VI2 semiconductor thin films en_US
dc.subject transparent conducting oxides en_US
dc.title Preparation and characterisation of certain II-VI, I-III-VI2 semiconductor thin films and transparent conducting oxides en_US
dc.type Thesis en_US

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