Sudha Kartha, C; Vijayakumar, K P; Angel, Susan Cherian; Abe, T; Kashiwaba, Y(Elsevier, 2012)
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Abstract:
Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique
over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution
for CuInS2 were fixed as 1.2 and 5 respectively. In/S ratio in the precursor solution for In2S3 was fixed as 1.2/8. An
efficiency of 0.6% (fill factor -37.6%) was obtained. Cu diffusion to the In2S3 layer, which deteriorates junction
properties, is inevitable in CuInS2/In2S3 cell. So to decrease this effect and to ensure a Cu-free In2S3 layer at the top of
the cell, Cu/In ratio was reduced to 1. Then a remarkable increase in short circuit current density was occurred from 3
mA/cm2 to 14.8 mA/cm2 and an efficiency of 2.13% was achieved. Also when In/S ratio was altered to 1.2/12, the
short circuit current density increased to 17.8 mA/cm2 with an improved fill factor of 32% and efficiency remaining
as 2%. Thus Cu/In and In/S ratios in the precursor solutions play a crucial role in determining the cell parameters