Now showing items 1-8 of 8
| Abstract: | b-In2S3 thin filmsweredepositedonIndiumTinOxidesubstratesusingtheChemical SprayPyrolysistechnique.Metalcontactwasdepositedoverthe b-In2S3 thin filmto formahetero-structureofthetypeITO/b-In2S3/Metal.Theintensityoftwophoto- luminescenceemissionsfromthe b-In2S3 thin film,centeredat520and690nmcould be variedbytheapplicationofanexternalbiasvoltagetothishetero-structure.The emissionscouldbeswitchedonoroffdependinguponthemagnitudeoftheexternal appliedbiasvoltage.Thusthepresenceoftwoconductingstatesinthishetero-structure could beidentified.Thetemporalvariationinintensityofthephotoluminescence emissionwiththeapplicationofthebiasvoltagehasalsobeenstudied.Thecondition underwhichphotoluminescencequenchingoccurshasbeenrepresentedbyafirst order differentialequationbetweendiffusionlengthandcarrierconcentration |
| Description: | MaterialsScienceinSemiconductorProcessing14(2011)58–61 |
| URI: | http://dyuthi.cusat.ac.in/purl/4724 |
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| Bias voltagecon ... rom b-In2S3 thin films.pdf | (318.6Kb) |
| Abstract: | Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution for CuInS2 were fixed as 1.2 and 5 respectively. In/S ratio in the precursor solution for In2S3 was fixed as 1.2/8. An efficiency of 0.6% (fill factor -37.6%) was obtained. Cu diffusion to the In2S3 layer, which deteriorates junction properties, is inevitable in CuInS2/In2S3 cell. So to decrease this effect and to ensure a Cu-free In2S3 layer at the top of the cell, Cu/In ratio was reduced to 1. Then a remarkable increase in short circuit current density was occurred from 3 mA/cm2 to 14.8 mA/cm2 and an efficiency of 2.13% was achieved. Also when In/S ratio was altered to 1.2/12, the short circuit current density increased to 17.8 mA/cm2 with an improved fill factor of 32% and efficiency remaining as 2%. Thus Cu/In and In/S ratios in the precursor solutions play a crucial role in determining the cell parameters |
| Description: | Energy Procedia 15 ( 2012 ) 283 – 290 |
| URI: | http://dyuthi.cusat.ac.in/purl/4722 |
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| CuInS2In2S3 Cel ... ios on Cell Parameters.pdf | (1.060Mb) |
| Abstract: | Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2 |
| Description: | Thin Solid Films 518 (2010) 1767–1773 |
| URI: | http://dyuthi.cusat.ac.in/purl/4712 |
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| Non-destructive ... l deflection technique.pdf | (1.073Mb) |
| Abstract: | Effect of varying spray rate on the structure and optoelectronic properties of spray pyrolysed ZnO film is analysed. ZnO films were characterised using different techniques such as X-ray diffraction (XRD), photoluminescence, electrical resistivity measurement, and optical absorption. The XRD analysis proved that, with the increase in spray rate, orientation of the grains changed from (1 0 1) plane to (0 0 2) plane. The films exhibited luminescence in two regions—one was the ‘near band-edge’ (NBE) (∼380 nm) emission and the other one was the ‘blue-green emission’ (∼503 nm). Intensity of the blue-green emission decreased after orientation of grains shifted to (0 0 2) plane. Scanning electron microscope (SEM) analysis of the films asserts that spray rate has major role in improving the crystallographic properties of the films. Moreover resistivity of the films could be lowered to 2.4×10−2 cm without any doping or post-deposition annealing |
| Description: | Applied Surface Science 256 (2010) 6025–6028 |
| URI: | http://dyuthi.cusat.ac.in/purl/4714 |
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| On tuning the o ... rolysed ZnO thin films.pdf | (464.4Kb) |
| Abstract: | SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N105/cm) were deposited at substrate temperature of 375 °C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375 °C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also determined |
| Description: | Thin Solid Films 518 (2010) 4370–4374 |
| URI: | http://dyuthi.cusat.ac.in/purl/4713 |
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| Optimization of ... d p-type layers of SnS.pdf | (827.3Kb) |
| Abstract: | This work projects photoluminescence (PL) as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO) thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP) by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE) at 380 nm and the deep level emission (DLE) at ∼500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE (𝐼DLE/𝐼NBE) can be reduced by controlling oxygen incorporation in the sample. 𝐼-𝑉 measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of 𝐼DLE/𝐼NBE and resistivity for samples prepared under different deposition conditions is similar in nature. 𝐼DLE/𝐼NBE was always less than resistivity by an order for all samples.Thus from PL measurements alone, the order of resistivity of the samples can be estimated. |
| Description: | International Journal of Photoenergy Volume 2013, Article ID 105796, 9 pages |
| URI: | http://dyuthi.cusat.ac.in/purl/4723 |
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| Reliable and Da ... luminescence Technique.pdf | (1.904Mb) |
| Abstract: | Effect of chlorine doping on the opto-electronic properties of β-In2S3 thin film, deposited by spray pyrolysis technique is studied for the first time. Chlorine was incorporated in the spray solution, using HCl. Pristine sample prepared using In(NO3)3 and thiourea as the precursors showed very low photosensitivity. But upon adding optimum quantity of chlorine, the photosensitivity increased by 3 orders. X-ray analysis revealed that crystallinity was also increasing up to this optimum level of Cl concentration. It was also observed that samples with high photosensitivity were having higher band gap. The present study proved that doping with chlorine was beneficial as this could result in forming crystalline and photosensitive films of indium sulfide. |
| Description: | Thin Solid Films 518 (2010) 1779–1783 |
| URI: | http://dyuthi.cusat.ac.in/purl/4711 |
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| Role of chlorin ... of β-In2S3 thin films.pdf | (681.1Kb) |
| Abstract: | In this paper, we report the results of investigations on the potential of spray pyrolysis technique in depositing electron selective layer over larger area for the fabrication of inverted bulk-heterojunction polymer solar cells. The electron selective layer (In2S3) was deposited using spray pyrolysis technique and the linear heterojunction device thus fabricated exhibited good uniformity in photovoltaic properties throughout the area of the device. An MEH-PPV:PCBM inverted bulk-heterojunction device with In2S3 electron selective layer (active area of 3.25 3.25 cm2) was also fabricated and tested under indoor and outdoor conditions. Fromthe indoor measurements employing a tungsten halogen lamp (50mW/cm2 illumination), an opencircuit voltage of 0.41V and a short-circuit current of 5.6mA were obtained. On the other hand, the outdoor measurements under direct sunlight (74mW/cm2) yielded an open-circuit voltage of 0.46V and a short-circuit current of 9.37mA |
| Description: | Phys. Status Solidi A 209, No. 1, 199–203 (2012) |
| URI: | http://dyuthi.cusat.ac.in/purl/4721 |
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| Spray pyrolysed ... on polymer solar cells.pdf | (429.7Kb) |
Now showing items 1-8 of 8
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