Sudha Kartha, C; Vijayakumar, K P; Tina, Sebastian; Deepa, K G; Anita, Warrier R(Elsevier, September 19, 2009)
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Abstract:
Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution
in and around a sample, due to various non-radiative decay processes occurring within the material. This tool
was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness
<1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination
velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric
films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime
(0.35 μs for CuInS2, 12 μs for CuInSe2