George, S D; Radhakrishnan, P; Nampoori, V P N; Vallabhan, C P G(Springer-Verlag, 2003)
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Abstract:
Laser induced transverse photothermal deflection
technique has been employed to determine the thermal parameters
of InP doped with Sn, S and Fe as well as intrinsic
InP. The thermal diffusivity values of these various samples
are evaluated from the slope of the curve plotted between the
phase of photothermal deflection signal and pump-probe offset.
Analysis of the data shows that heat transport and hence
the thermal diffusivity value, is greatly affected by the introduction
of dopant. It is also seen that the direction of heat flow with
respect to the plane of cleavage of semiconductor wafers influences
the thermal diffusivity value. The results are explained in
terms of dominating phonon assisted heat transfer mechanism in semiconductors.