Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

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Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

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dc.contributor.author Sudha Kartha, C
dc.contributor.author Vijayakumar, K P
dc.contributor.author Anita, Warrier R
dc.contributor.author Sajeesh, T H
dc.date.accessioned 2014-09-22T05:27:32Z
dc.date.available 2014-09-22T05:27:32Z
dc.date.issued 2010-02-02
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/4713
dc.description Thin Solid Films 518 (2010) 4370–4374 en_US
dc.description.abstract SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N105/cm) were deposited at substrate temperature of 375 °C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375 °C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also determined en_US
dc.description.sponsorship Cochin University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.subject Chemical spray pyrolysis (CSP) en_US
dc.subject Tin sulfide en_US
dc.subject Optical properties en_US
dc.subject Structural properties en_US
dc.subject X-ray diffraction en_US
dc.title Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS en_US
dc.type Article en_US


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