| dc.contributor.author |
Sudha Kartha, C |
|
| dc.contributor.author |
Vijayakumar, K P |
|
| dc.contributor.author |
Tina, Sebastian |
|
| dc.contributor.author |
Deepa, K G |
|
| dc.contributor.author |
Anita, Warrier R |
|
| dc.date.accessioned |
2014-09-22T05:22:27Z |
|
| dc.date.available |
2014-09-22T05:22:27Z |
|
| dc.date.issued |
2009-09-19 |
|
| dc.identifier.uri |
http://dyuthi.cusat.ac.in/purl/4712 |
|
| dc.description |
Thin Solid Films 518 (2010) 1767–1773 |
en_US |
| dc.description.abstract |
Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution
in and around a sample, due to various non-radiative decay processes occurring within the material. This tool
was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness
<1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination
velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric
films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime
(0.35 μs for CuInS2, 12 μs for CuInSe2 |
en_US |
| dc.description.sponsorship |
Cochin University of Science and Technology |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Elsevier |
en_US |
| dc.subject |
Photothermal |
en_US |
| dc.subject |
Thinfilm |
en_US |
| dc.subject |
Mobility |
en_US |
| dc.subject |
Carrier lifetime |
en_US |
| dc.subject |
Surface recombination velocity |
en_US |
| dc.title |
Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique |
en_US |
| dc.type |
Article |
en_US |