Xiong,X Z; Fusco,V F(Microwave and Optical Technology Letters, August 5, 2002)
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Abstract:
In this Letter a new physical model for metal-insulatormetal
CMOS capacitors is presented. In the model the parameters of the
circuit are derived from the physical structural details. Physical behaviors
due to metal skin effect and inductance have been considered. The
model has been confirmed by 3D EM simulator and design rules proposed.
The model presented is scalable with capacitor geometry, allowing
designers to predict and optimize quality factor. The approach has
been verified for MIM CMOS capacitors