Investigations on the structural, optical and Magnetic properties of nanostructured cerium oxide in pure and doped forms and its polymer nanocomposiets

Abstract

This thesis Entitled INVESTIGATIONS ON THE STRUCTURAL, OPTICAL AND MAGNETIC PROPERTIES OF NANOSTRUCTURED CERIUM OXIDE IN PURE AND DOPED FORMS AND ITS POLYMER NANOCOMPOSITES.Synthesis and processing of nanomatelials and nanostmctures are the essential aspects of nanotechnology. Studies on new physical properties and applications of nanomaterials and nanostructures are possible only when nanostructured materials are made available with desired size, morphology,crystal structure and chemical composition.Recently, several methods have been developed to prepare pure and doped CeO2 powder, including wet chemical synthesis, thermal hydrolysis, flux method, hydrothermal synthesis, gas condensation method, microwave technique etc. In all these, some special reaction conditions, such as high temperature, high pressure, capping agents, expensive or toxic solvents etc. have been involved.Another hi gh-li ght of the present work is room temperature ferromagnetism in cerium oxdie thin films deposited by spray pyrolysis technique.The observation of self trapped exciton mediated PL in ceria nanocrystals is another important outcome of the present study. STE mediated mechanism has been proposed for CeO2 nanocrystals based on the dependence of PL intensity on the annealing temperature. It would be interesting to extent these investigations to the doped forms of cerium oxide and cerium oxide thin films to get deeper Insight into STE mechanism.Due to time constraints detailed investigations could not be canied out on the preparation and properties of free standing films of polymer/ceria nanocomposites. It has been observed that good quality free standing films of PVDF/ceria, PS/C61‘l8, PMMA/ceria can be obtained using solution casting technique. These polymer nanocomposite films show high dielectric constant around 20 and offer prospects of applications as gate electrodes in metal-oxide semiconductor devices.