Photoacoustic investigation of intrinsic and extrinsic Si

Dyuthi/Manakin Repository

Photoacoustic investigation of intrinsic and extrinsic Si

Show simple item record Sajan, D George Aneeshkumar, B Radhakrishnan, P Nampoori, V P N Vallabhan, C P G 2011-11-08T07:12:57Z 2011-11-08T07:12:57Z 2004
dc.description.abstract An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers. en_US
dc.description.sponsorship Cochin University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher Society of Photo-Optical Instrumentation Engineers en_US
dc.subject photoacoustics en_US
dc.subject semiconductors en_US
dc.subject thermal and transport properties en_US
dc.title Photoacoustic investigation of intrinsic and extrinsic Si en_US
dc.type Working Paper en_US
dc.contributor.faculty Technology en_US
dc.identifier.url en_US

Files in this item

Files Size Format View Description
Dyuthi-P0255.pdf 712.2Kb PDF View/Open PDF

This item appears in the following Collection(s)

Show simple item record

Search Dyuthi

Advanced Search


My Account