Photothermal deflection measurement on heat transport in GaAs epitaxial layers

Dyuthi/Manakin Repository

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

Show simple item record

dc.contributor.author Radhakrishnan, P
dc.contributor.author V P N Nampoori
dc.contributor.author Girijavallabhan, C P
dc.contributor.author Sajan, D George
dc.date.accessioned 2010-07-14T05:27:19Z
dc.date.available 2010-07-14T05:27:19Z
dc.date.issued 2003
dc.identifier.citation International School of Photonics, Cochin University of Science and Technology en_US
dc.identifier.issn Physical Review,B 68, 165319 (2003)
dc.identifier.other DOI: 10.1103/PhysRevB.68.165319
dc.identifier.other PACS number~s!: 78.20.Nv, 66.30.Xj, 61.72.Vv, 66.70.+f
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/1809
dc.description.abstract In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons en_US
dc.language.iso en en_US
dc.publisher Physical Review, American Physical Society en_US
dc.subject Photothermal deflection en_US
dc.subject heat transport en_US
dc.subject GaAs epitaxial layers en_US
dc.subject Doping en_US
dc.subject thermal diffusivity en_US
dc.subject phonons en_US
dc.title Photothermal deflection measurement on heat transport in GaAs epitaxial layers en_US
dc.type Working Paper en_US


Files in this item

Files Size Format View Description
Dyuthi-P0246.pdf 216.6Kb PDF View/Open PDF

This item appears in the following Collection(s)

Show simple item record

Search Dyuthi


Advanced Search

Browse

My Account