Jayaraj, M K(Electrochemical Society, February 18, 2008)
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Abstract:
The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the
characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films
were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of
0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited
channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased
the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn
contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing
the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged
from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also
discussed in relation to the carrier transport properties and amorphous structures.
Nithyaja, Balan; Misha, Hari; Nampoori, Vadakkedathu P N(Optical Society of America, July 1, 2009)
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Abstract:
A solid-state laser based on a dye-doped deoxyribonucleic acid (DNA) matrix is described. A thin solid film of DNA has been fabricated by treating with polyvinyl alcohol (PVA) and used as a host for the laser dye Rhodamine 6G. The edge emitted spectrum clearly indicated the existence of laser modes and amplified spontaneous emission. Lasing was obtained by pumping with a frequency-doubled Nd:YAG laser at 532 nm. For a pump energy of 10 mJ/pulse, an intense line with FWHM ≈0.2 nm was observed at 566 nm due to selective mode excitation.
Junaid, Bushiri M; Gopakumar, V; Vaidyan, V K(January 17, 2013)
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Abstract:
ZnO thin films were coated on amorphous glass substrate at various temperatures in the
range 160-500 0C by spray pyrolysis method. The as deposited films were characterised by
using XRD and SEM. Wurtzite phase of ZnO was formed at a substrate temperature of
400 0C, highly oriented (002) phase was developed with respect to increase of substrate
temperature from 450 to 500 0C. Morphological and growth mode of these films were
analyzed with respect to structural orientation of films from wurtzite to highly (002)
oriented phase. Present study reveals that substrate temperature was one of the important
parameters which determine the crystalline quality, population of defects, grain size,
orientation and morphology of the films
Description:
Journal of Optoelectronics and Biomedical Materials Vol. 5 Issue 1, January - March 2013 p. 1 - 8