Vallabhan, C P G; Thomas, J; Pillai, V N S; Nampoori, V P N(Springer, 1999)
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Abstract:
The electrical conductivity and thermal diffusivity of pristine and iodine doped vanadyl naphthalocyanine (VONc) were studied. In the pristine sample, the temperature dependence was very weak below 300 K. The increase in conductivity at higher temperature must be due to an enhancement in carrier density with increase in thermal energy. The electrical conductivity of VONc increased when doped with iodine. The behavior of VONcI indicated that considerable changes have occurred in the electronic environment of the molecule as a result of doping. Iodine doping enhanced the thermal diffusivity of VONc. The increase in thermal diffusivity of the iodine doped sample may be due to the disorder of iodine atoms occupying the channels in one dimensional lattices.
Radhakrishnan, P; Nampoori, V P N; Girijavallabhan, C P; George, N A; Paul, T; Sebastian,M T(Journal of Materials Science Letters,Kluwer Academic Publishers, 2000)
Girijavallabhan, C P; Radhakrishnan, P; Nampoori, V P N; George, N A; Paul, T; Sebastian,M T(Journal of Materials Science Letters,Kluwer Academic Publishers, 2000)
Sankara Raman, S; Nampoori, V P N; Vallabhan, C P G; Ambadas, G; Sugunan, S(American Institute of Physics, 1995)
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Abstract:
The thermal diffusivity of y-alumina is determined by the photoacoustic method. The method is
calibrated by determining the thermal diffusivity of copper and aluminum. The effect of the
chemisorbed hydroxyl groups or thermal diffusivity is studied by degassing the sample at different
temperatures.
Sankara Raman, S; Nampoori, V P N; Vallabhan, C P G; Ambadas, G; Sugunan, S(American Institute of Physics, February 1, 1999)
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Abstract:
The effect of the chemisorbed hydroxyl groups on the thermal diffusivity of gama alumina is determined
by evaluating the thermal diffusivity at various degassing temperatures and by doping it with rare
earth oxide using photoacoustic technique. The thermal diffusivity is found to decrease with the
increase in degassing temperature as well as with the increase in the doping concentration of rare
earth oxide. This decrease has been attributed to the loss of hydroxyl ion from the y-Al2O3.
Girijavallabhan, C P; Radhakrishnan, P; Nampoori, V P N; Sajan, D George(Physical Review, American Physical Society, October 16, 2003)
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Abstract:
In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double
epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer
grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive
photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the
phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that
the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the
doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped
samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results
are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process
involved in the propagation of phonons.
V P N Nampoori; Radhakrishnan, P; Girijavallabhan, C P; Sajan, D George(Physical Review, American Physical Society, 2003)
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Abstract:
In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double
epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer
grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive
photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the
phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that
the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the
doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped
samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results
are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process
involved in the propagation of phonons
Radhakrishnan, P; V P N Nampoori; Girijavallabhan, C P; Sajan, D George(Physical Review, American Physical Society, 2003)
[+]
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Abstract:
In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double
epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer
grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive
photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the
phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that
the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the
doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped
samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results
are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process
involved in the propagation of phonons
Sajan, D George; Achamma, Kurian; Martin, Lase; Nampoori, V P N; Vallabhan, C P G(SPIE, 2001)
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Abstract:
An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.
Sugunan, S; Suja, H; Sanjay, G; Joseph, L K; Nampoori, V P N; Radhakrishnan, P(Taylor & Francis, April 1, 2009)
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Abstract:
Thermal diffusivity (TD) measurements were performed on some industrially
important dyes – auramine O (AO), malachite green and methylene blue (MB) –
adsorbed K-10 montmorillonites using photoacoustic method. The TD value for
the dye-adsorbed clay mineral was observed to change with a variation in dye
concentration. The contribution of the dye towards TD was also determined. The
repeatedly adsorbed samples with MB and AO exhibited a lower TD than the
single-adsorbed samples. TD values of sintered MB samples were also obtained
experimentally. These sintered samples exhibit a higher TD, although they show
a trend similar to that of non-sintered pellets. A variation in dye concentration
and sintering temperature can be used for tuning the TD value of the clay mineral
to the desired level
Description:
Philosophical Magazine
Vol. 89, No. 10, 1 April 2009, 895–905
Joseph, L K; Sanjay, G; Suja, H; Sugunan, S; Nampoori, V P N; Radhakrishnan, P(Taylor & Francis, April 1, 2009)
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Abstract:
Thermal diffusivity (TD) measurements were performed on some industrially
important dyes – auramine O (AO), malachite green and methylene blue (MB) –
adsorbed K-10 montmorillonites using photoacoustic method. The TD value for
the dye-adsorbed clay mineral was observed to change with a variation in dye
concentration. The contribution of the dye towards TD was also determined. The
repeatedly adsorbed samples with MB and AO exhibited a lower TD than the
single-adsorbed samples. TD values of sintered MB samples were also obtained
experimentally. These sintered samples exhibit a higher TD, although they show
a trend similar to that of non-sintered pellets. A variation in dye concentration
and sintering temperature can be used for tuning the TD value of the clay mineral
to the desired level.
Radhakrishnan, P; V P N Nampoori; Girijavallabhan, C P; Sajan, D George(Journal of Physics D : Applied Physics, Institute of Physics Publishing, April 2, 2003)
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Abstract:
An open photoacoustic cell operating in the low range of chopping
frequency has been employed to evaluate the thermal diffusivity values of
intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is
calibrated by the evaluation of thermal diffusivity value of pure Si and
GaAs. The present investigation shows that doped samples show a reduced
value for thermal diffusivity compared to intrinsic sample. From the
analysis of data it is also seen that nature of dopant clearly influences the
thermal diffusivity value of semiconductors. The results are explained in
terms of phonon assisted heat transfer mechanism in semiconductors
Girijavallabhan, C P; Radhakrishnan, P; V P N Nampoori; Sajan, D George(Journal of Physics D : Applied Physics, Institute of Physics Publishing, April 2, 2003)
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Abstract:
An open photoacoustic cell operating in the low range of chopping
frequency has been employed to evaluate the thermal diffusivity values of
intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is
calibrated by the evaluation of thermal diffusivity value of pure Si and
GaAs. The present investigation shows that doped samples show a reduced
value for thermal diffusivity compared to intrinsic sample. From the
analysis of data it is also seen that nature of dopant clearly influences the
thermal diffusivity value of semiconductors. The results are explained in
terms of phonon assisted heat transfer mechanism in semiconductors
Nampoori, V P N; Radhakrishnan, P; Girijavallabhan, C P; Sajan, D George(Journal of Physics D : Applied Physics, Institute of Physics Publishing, April 2, 2003)
[+]
[-]
Abstract:
An open photoacoustic cell operating in the low range of chopping
frequency has been employed to evaluate the thermal diffusivity values of
intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is
calibrated by the evaluation of thermal diffusivity value of pure Si and
GaAs. The present investigation shows that doped samples show a reduced
value for thermal diffusivity compared to intrinsic sample. From the
analysis of data it is also seen that nature of dopant clearly influences the
thermal diffusivity value of semiconductors. The results are explained in
terms of phonon assisted heat transfer mechanism in semiconductors
Sajan, D George; Rajesh, Komban; Warrier, K G K; Radhakrishnan, P; Nampoori, V P N; Vallabhan, C P G(Taylor & Francis, February , 2010)
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Abstract:
A laser-induced photoacoustic technique was employed to investigate
thermal transport through nanocrystalline CePO4 samples prepared via the
sol–gel route. Evaluation of thermal diffusivity was carried out using the
one-dimensional model of Rosencwaig and Gersho for the reflection
configuration of the photoacoustic method. Structural analyses of samples
revealed that they are nanoporous in nature, possessing micron-sized
grains. Analysis of results shows that thermal diffusivity value varies with
sintering temperature. Results are explained in terms of the variation in
porosity with sintering temperature and the effects of various scattering
mechanisms on the propagation of phonons through the nanoporous
ceramic matrix. Further analyses confirm that apart from porosity, grain
boundary resistance and interface thermal resistance influence the effective
value of thermal diffusivity of the samples under investigation.
Bindhu, C V; Harilal, S S; Nampoori, V P N; Vallabhan, C P G(Society of Photo-Optical Instrumentation Engineers, 1998)
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Abstract:
Thermal diffusivity measurements are carried out in certain organic liquids using the pulsed dual beam thermal lens technique. The 532 nm pulses from a frequency doubled Q-switched Nd:YAG laser are used as the heating source and an intensity stabilized He-Ne laser serves as the probe beam. Experimental determination of the characteristic time constant of the transient thermal lens signal is verified theoretically. Measured thermal diffusivity values are in excellent agreement with literature values.