Now showing items 1-1 of 1
Abstract: | Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution for CuInS2 were fixed as 1.2 and 5 respectively. In/S ratio in the precursor solution for In2S3 was fixed as 1.2/8. An efficiency of 0.6% (fill factor -37.6%) was obtained. Cu diffusion to the In2S3 layer, which deteriorates junction properties, is inevitable in CuInS2/In2S3 cell. So to decrease this effect and to ensure a Cu-free In2S3 layer at the top of the cell, Cu/In ratio was reduced to 1. Then a remarkable increase in short circuit current density was occurred from 3 mA/cm2 to 14.8 mA/cm2 and an efficiency of 2.13% was achieved. Also when In/S ratio was altered to 1.2/12, the short circuit current density increased to 17.8 mA/cm2 with an improved fill factor of 32% and efficiency remaining as 2%. Thus Cu/In and In/S ratios in the precursor solutions play a crucial role in determining the cell parameters |
Description: | Energy Procedia 15 ( 2012 ) 283 – 290 |
URI: | http://dyuthi.cusat.ac.in/purl/4722 |
Files | Size |
---|---|
CuInS2In2S3 Cel ... ios on Cell Parameters.pdf | (1.060Mb) |
Now showing items 1-1 of 1
Dyuthi Digital Repository Copyright © 2007-2011 Cochin University of Science and Technology. Items in Dyuthi are protected by copyright, with all rights reserved, unless otherwise indicated.