Now showing items 1-8 of 8
| Abstract: | The thesis presents the results of the investigations on the crystallisation ‘behaviour, detect structure end electrical properties of certain organic crystals---phthslic snhydride end potsssiun scid phthalate Hollow crystals of phthalic snhydride were grown from vapour. the norpholog of these hollow crystals were studied in detail and s. mechanism for their growth has been proposed. A closed crystal—vapour system was used to study the basal plane growth of the whiskers and the sequential growth, observed, confirmed the mechanism suggested for hollow crystals. The dendritic crystals of phthslic enhydride were grown, both iron the melt and solution. The observed morphologies of these dendrites ere described. Bpherulites of phthalic anhydride have been grown by the artificial initiation of nucleation, from melt and solution. The variation of the substructure oi’ these spherulites with the growth tenperature wee investigated. The spherulitic filll having ribbon substructure were etched to reveal dislocations. A mechanism for the formation of the observed etch pattern has been suggested. the slip occurring in these ribbons were studied and the results are presented |
| Description: | Department of physics, Cochin University of Science And Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3306 |
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| Dyuthi-T1280.pdf | (29.79Mb) |
| Abstract: | During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as stronglybonded two dimensional chalcogen-metal-chalcogen layers which are loosely coupled to one another by the weak van der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and Snsea). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystalstructure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. Aitin atom is surrounded by six chalcogen atoms octahedrally. In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding. |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3361 |
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| Dyuthi-T1338.pdf | (8.485Mb) |
| Abstract: | During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as strongly bonded two dimensional chalcogen-metal~chalcogen layers which are loosely coupled to one another by the weak ven der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and SnSe2). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystal structure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. A tin atom is surrounded by six chalcogen atoms octahedrally.In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding. |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3298 |
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| Dyuthi-T1267.pdf | (15.42Mb) |
| Abstract: | Over the past years there has been considerable interest in the growth of single crystals both from the point of view of basic research and technological application. With the revolutionary emergence of solid state electronics which is based on single crystal technolo8Ys basic and applied studies on crystal growth and characterization _have gained a-more significant role in material science. These studies are being carried out for single crystals not only of semiconductor and other electronic materials but also of metals and insulators. Many organic crystals belonging to the orthorhombic class exhibit ferroelectric, electrooptic, triboluminescent and piezoelectric properties. Diammonium Hydrogen Citrate (DAHC) crystals are reported to be piezoelectric and triboluminescent /1/. Koptsik et al. /2/ have reported the piezoelectric nature of Citric Acid Monohydrate (CA) crystals. And since not much work has been done on these crystals, it has been thought useful to grow and characterize these crystals. This thesis presents a study of the growth of these crystals from solution and their defect structures. The results of the microindentation and thermal analysis are presented. Dielectric, fractographic, infrared (IR) and ultraviolet (UV) studies of DAHC crystals are also reported |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3560 |
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| Dyuthi-T1542.pdf | (5.593Mb) |
| Abstract: | The Thesis consist of the study of the electrical properties of antimony trisulphide films and the electrical behaviour of different metal contacts to antimony trisulphide films. Since the thermal evapouration of the compound antimony trisulphide as such mayresult in nonstoichiometric compound films , sb2s3 films in the present work were mostly prepared by the three temperature method ,keeping the substrate at different temperature ranging from 3031 to 4231 and evapourating antimony and sulphur simultaneously from separate sources. |
| Description: | Department of Physics, Cochin University of Science And Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3568 |
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| Dyuthi-T1587.pdf | (9.233Mb) |
| Abstract: | The work reported in this thesis is the preparation, and the structural, electrical and optical properties of reactively evaporated lead sulphide and tin telluride thin films. The three temperature method had been used for the preparation of these semiconductor thin films. In this preparation technique constituent elements are evaporated from separate sources with the substrate kept at a particular temperature. when one of the constituent element is a gas near room temperature, the method is often called reactive evaporation. It has been found for many materials that a stoichiometric interval exists with a limited range of flux and substrate temperature. Usually this technique is used for the preparation of thin films of high melting point compounds or of materials which decompose during evaporation. Tin telluride and lead sulphide are neither high melting point materials nor do they decompose on melting. But even than reactive evaporation offers the possibility of changing the ratios of the flux of the constituent elements within a wide range and studying its effect on the properties of the films |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3661 |
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| Dyuthi-T1581.pdf | (5.695Mb) |
| Abstract: | This thesis consists of a study of the effect of electrode films and overlayer films on the electrical properties of certain metal films. The films have been prepared on glass substrates by thermal evapouration in a vaccum 10 terr. The properties of Al films on Ag, Al,Au and Cu films on In electrodes ,and Bi/Ag bilayer films have been studied. The influence of annealing electrodes at higher temperature on the electrical properties of metal films has also been investigated. Further the effect of varying layer thickness in the bilayer films ,both annealed at higher temperature and annealed at room temperature have been examined. |
| Description: | Department Of Physics,Cochin University Of Science And Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3605 |
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| Dyuthi-T1563.pdf | (12.97Mb) |
| Abstract: | This thesis deals with the preparation and properties of two compounds of V-II family, viz. bismuth telluride and bismuth oxide, in thin filmform. In the first chapter is given the resume of basic solid state physics relevant to the work reported here. In the second chapter the different methods of thin film preparationtia described. Third chapter deals with the experimental techniques used for preparation and characterization of the films. Fourth chapter deals with the preparation and propertiesof bismuth telluride films. In next four chapters, the preparation and properties of bismuth oxide films are discussed in detail. In the last chapter the use of Bi205 films in the fabrication of Heat mirrors is examined and discussed. |
| Description: | Department of physics, Cochin University of Science And Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3351 |
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| Dyuthi-T1309.pdf | (5.162Mb) |
Now showing items 1-8 of 8
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