Now showing items 1-17 of 17
| Abstract: | The electrical conductivity and thermal diffusivity of pristine and iodine doped vanadyl naphthalocyanine (VONc) were studied. In the pristine sample, the temperature dependence was very weak below 300 K. The increase in conductivity at higher temperature must be due to an enhancement in carrier density with increase in thermal energy. The electrical conductivity of VONc increased when doped with iodine. The behavior of VONcI indicated that considerable changes have occurred in the electronic environment of the molecule as a result of doping. Iodine doping enhanced the thermal diffusivity of VONc. The increase in thermal diffusivity of the iodine doped sample may be due to the disorder of iodine atoms occupying the channels in one dimensional lattices. |
| URI: | http://dyuthi.cusat.ac.in/purl/2387 |
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| Dyuthi-P0210.pdf | (49.04Kb) |
| URI: | http://dyuthi.cusat.ac.in/purl/1800 |
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| Dyuthi-P0224.pdf | (40.30Kb) |
| URI: | http://dyuthi.cusat.ac.in/purl/1801 |
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| Photoacoustic i ... f excess lead oxide on.pdf | (40.30Kb) |
| Abstract: | The thermal diffusivity of y-alumina is determined by the photoacoustic method. The method is calibrated by determining the thermal diffusivity of copper and aluminum. The effect of the chemisorbed hydroxyl groups or thermal diffusivity is studied by degassing the sample at different temperatures. |
| URI: | http://dyuthi.cusat.ac.in/purl/2276 |
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| Dyuthi-SS37.pdf | (239.8Kb) |
| Abstract: | The effect of the chemisorbed hydroxyl groups on the thermal diffusivity of gama alumina is determined by evaluating the thermal diffusivity at various degassing temperatures and by doping it with rare earth oxide using photoacoustic technique. The thermal diffusivity is found to decrease with the increase in degassing temperature as well as with the increase in the doping concentration of rare earth oxide. This decrease has been attributed to the loss of hydroxyl ion from the y-Al2O3. |
| URI: | http://dyuthi.cusat.ac.in/purl/2656 |
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| Dyuthi-P0337.pdf | (665.8Kb) |
| Abstract: | In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons |
| URI: | http://dyuthi.cusat.ac.in/purl/1810 |
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| Photothermal de ... GaAs epitaxial layers.pdf | (221.8Kb) |
| Abstract: | In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons. |
| URI: | http://dyuthi.cusat.ac.in/purl/1808 |
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| Photothermal de ... GaAs epitaxial layers.pdf | (221.8Kb) |
| Abstract: | In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons |
| URI: | http://dyuthi.cusat.ac.in/purl/1809 |
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| Dyuthi-P0246.pdf | (221.8Kb) |
| Abstract: | Photothermal effect refers to heating of a sample due to the absorption of electromagnetic radiation. Photothermal (PT) heat generation which is an example of energy conversion has in general three kinds of applications. 1. PT material probing 2. PT material processing and 3. PT material destruction. The temperatures involved increases from 1-. 3. Of the above three, PT material probing is the most important in making significant contribution to the field of science and technology. Photothermal material characterization relies on high sensitivity detection techniques to monitor the effects caused by PT material heating of a sample. Photothermal method is a powerful high sensitivity non-contact tool used for non-destructive thermal characterization of materials. The high sensitivity of the photothermal methods has led to its application for analysis of low absorbance samples. Laser calorimetry, photothermal radiometry, pyroelectric technique, photoacoustic technique, photothermal beam deflection technique, etc. come under the broad class ofphotothermal techniques. However the choice of a suitable technique depends upon the nature of the sample, purpose of measurement, nature of light source used, etc. The present investigations are done on polymer thin films employing photothermal beam deflection technique, for the successful determination of their thermal diffusivity. Here the sample is excited by a He-Ne laser (A = 6328...\ ) which acts as the pump beam. Due to the refractive index gradient established in the sample surface and in the adjacent coupling medium, another optical beam called probe beam (diode laser, A= 6500A ) when passed through this region experiences a deflection and is detected using a position sensitive detector and its output is fed to a lock-in amplifier from which the amplitude and phase of the deflection can be directly obtained. The amplitude and phase of the signal is suitably analysed for determining the thermal diffusivity.The production of polymer thin film samples has gained considerable attention for the past few years. Plasma polymerization is an inexpensive tool for fabricating organic thin films. It refers to formation of polymeric materials under the influence of plasma, which is generated by some kind of electric discharge. Here plasma of the monomer vapour is generated by employing radio frequency (MHz) techniques. Plasma polymerization technique results in homogeneous, highly adhesive, thermally stable, pinhole free, dielectric, highly branched and cross-linked polymer films. The possible linkage in the formation of the polymers is suggested by comparing the FTIR spectra of the monomer and the polymer.Near IR overtone investigations on some organic molecules using local mode model are also done. Higher vibrational overtones often provide spectral simplification and greater resolution of peaks corresponding to nonequivalent X-H bonds where X is typically C, N or O. Vibrational overtone spectroscopy of molecules containing X-H oscillators is now a well established tool for molecular investigations. Conformational and steric differences between bonds and structural inequivalence ofCH bonds (methyl, aryl, acetylenic, etc.) are resolvable in the higher overtone spectra. The local mode model in which the X-H oscillators are considered to be loosely coupled anharmonic oscillators has been widely used for the interpretation of overtone spectra. If we are exciting a single local oscillator from the vibrational ground state to the vibrational state v, then the transition energy of the local mode overtone is given by .:lE a......v = A v + B v2 • A plot of .:lE / v versus v will yield A, the local mode frequency as the intercept and B, the local mode diagonal anharmonicity as the slope. Here A - B gives the mechanical frequency XI of the oscillator and B = X2 is the anharmonicity of the bond. The local mode parameters XI and X2 vary for non-equivalent X-H bonds and are sensitive to the inter and intra molecular environment of the X-H oscillator. |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2330 |
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| Dyuthi-T0604.pdf | (5.899Mb) |
| Abstract: | An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors. |
| URI: | http://dyuthi.cusat.ac.in/purl/2469 |
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| Dyuthi-P0232.pdf | (657.8Kb) |
| Abstract: | Thermal diffusivity (TD) measurements were performed on some industrially important dyes – auramine O (AO), malachite green and methylene blue (MB) – adsorbed K-10 montmorillonites using photoacoustic method. The TD value for the dye-adsorbed clay mineral was observed to change with a variation in dye concentration. The contribution of the dye towards TD was also determined. The repeatedly adsorbed samples with MB and AO exhibited a lower TD than the single-adsorbed samples. TD values of sintered MB samples were also obtained experimentally. These sintered samples exhibit a higher TD, although they show a trend similar to that of non-sintered pellets. A variation in dye concentration and sintering temperature can be used for tuning the TD value of the clay mineral to the desired level |
| Description: | Philosophical Magazine Vol. 89, No. 10, 1 April 2009, 895–905 |
| URI: | http://dyuthi.cusat.ac.in/purl/3998 |
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| Thermal charact ... d K-10 montmorillonite.pdf | (388.6Kb) |
| Abstract: | Thermal diffusivity (TD) measurements were performed on some industrially important dyes – auramine O (AO), malachite green and methylene blue (MB) – adsorbed K-10 montmorillonites using photoacoustic method. The TD value for the dye-adsorbed clay mineral was observed to change with a variation in dye concentration. The contribution of the dye towards TD was also determined. The repeatedly adsorbed samples with MB and AO exhibited a lower TD than the single-adsorbed samples. TD values of sintered MB samples were also obtained experimentally. These sintered samples exhibit a higher TD, although they show a trend similar to that of non-sintered pellets. A variation in dye concentration and sintering temperature can be used for tuning the TD value of the clay mineral to the desired level. |
| URI: | http://dyuthi.cusat.ac.in/purl/2621 |
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| Dyuthi-P0182.pdf | (398.5Kb) |
| Abstract: | An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors |
| URI: | http://dyuthi.cusat.ac.in/purl/1833 |
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| Thermal charact ... hotoacoustic technique.pdf | (64.36Kb) |
| Abstract: | An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors |
| URI: | http://dyuthi.cusat.ac.in/purl/1832 |
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| Dyuthi-P0249.pdf | (64.36Kb) |
| Abstract: | An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors |
| URI: | http://dyuthi.cusat.ac.in/purl/1831 |
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| Thermal charact ... hotoacoustic technique.pdf | (64.36Kb) |
| Abstract: | A laser-induced photoacoustic technique was employed to investigate thermal transport through nanocrystalline CePO4 samples prepared via the sol–gel route. Evaluation of thermal diffusivity was carried out using the one-dimensional model of Rosencwaig and Gersho for the reflection configuration of the photoacoustic method. Structural analyses of samples revealed that they are nanoporous in nature, possessing micron-sized grains. Analysis of results shows that thermal diffusivity value varies with sintering temperature. Results are explained in terms of the variation in porosity with sintering temperature and the effects of various scattering mechanisms on the propagation of phonons through the nanoporous ceramic matrix. Further analyses confirm that apart from porosity, grain boundary resistance and interface thermal resistance influence the effective value of thermal diffusivity of the samples under investigation. |
| URI: | http://dyuthi.cusat.ac.in/purl/2423 |
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| Dyuthi-P0275.pdf | (543.3Kb) |
| Abstract: | Thermal diffusivity measurements are carried out in certain organic liquids using the pulsed dual beam thermal lens technique. The 532 nm pulses from a frequency doubled Q-switched Nd:YAG laser are used as the heating source and an intensity stabilized He-Ne laser serves as the probe beam. Experimental determination of the characteristic time constant of the transient thermal lens signal is verified theoretically. Measured thermal diffusivity values are in excellent agreement with literature values. |
| URI: | http://dyuthi.cusat.ac.in/purl/2390 |
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| Dyuthi-P0199.pdf | (133.9Kb) |
Now showing items 1-17 of 17
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