Anantharaman, M R; Mathai, C J; Saravanan, S; Jayalekshmi,S; Venkitachalam, S(Elsevier, August 5, 2002)
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Abstract:
Electrical properties of ac plasma polymerized aniline thin films are investigated with a view of determining the dominant
conduction mechanism. The current–voltage (I–V) characteristics in symmetric and asymmetric electrode configuration for
polyaniline thin films in the thickness range from 1300 to 2000 A ° are investigated. From the studies on asymmetric electrode
configuration, it is found that the dominant conduction mechanism in these films is of Schottky type
Rajeev, Kumar K; Dr.Sathianandan, K(Cochin University of Science and Technology, June 20, 1989)
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Abstract:
A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering,
glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode
structure, film area and film geometry.
Description:
Division of Thin Film, Department
of Physics, Cochin University of Science and Technology