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Please use this identifier to cite or link to this item: http://purl.org/purl/4724

Title: Bias voltagecontrolledphotoluminescencefrom b-In2S3 thin films
Authors: Sudha Kartha, C
Jayakrishnan, R
Vijayakumar, K P
Keywords: Thin films
Chemical SprayPyrolysis
Indium sulfide
Photoluminescence quenching
Voltage dependence
Issue Date: 2011
Publisher: Elsevier
Abstract: b-In2S3 thin filmsweredepositedonIndiumTinOxidesubstratesusingtheChemical SprayPyrolysistechnique.Metalcontactwasdepositedoverthe b-In2S3 thin filmto formahetero-structureofthetypeITO/b-In2S3/Metal.Theintensityoftwophoto- luminescenceemissionsfromthe b-In2S3 thin film,centeredat520and690nmcould be variedbytheapplicationofanexternalbiasvoltagetothishetero-structure.The emissionscouldbeswitchedonoroffdependinguponthemagnitudeoftheexternal appliedbiasvoltage.Thusthepresenceoftwoconductingstatesinthishetero-structure could beidentified.Thetemporalvariationinintensityofthephotoluminescence emissionwiththeapplicationofthebiasvoltagehasalsobeenstudied.Thecondition underwhichphotoluminescencequenchingoccurshasbeenrepresentedbyafirst order differentialequationbetweendiffusionlengthandcarrierconcentration
Description: MaterialsScienceinSemiconductorProcessing14(2011)58–61
URI: http://dyuthi.cusat.ac.in/purl/4724
Appears in Collections:Dr. C Sudha Kartha

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