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Please use this identifier to cite or link to this item: http://purl.org/purl/4712

Title: Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique
Authors: Sudha Kartha, C
Vijayakumar, K P
Tina, Sebastian
Deepa, K G
Anita, Warrier R
Keywords: Photothermal
Carrier lifetime
Surface recombination velocity
Issue Date: 19-Sep-2009
Publisher: Elsevier
Abstract: Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2
Description: Thin Solid Films 518 (2010) 1767–1773
URI: http://dyuthi.cusat.ac.in/purl/4712
Appears in Collections:Dr. C Sudha Kartha

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