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Please use this identifier to cite or link to this item: http://purl.org/purl/3298

Title: Growth and characterisation of tin dichalcogenide crystals
Authors: Valsala Kumari, C K
Dr.Joy, George
Keywords: Semiconductor
Crystal growth
Tin diselenide
Physical vapour transport
Issue Date: 20-Sep-1984
Publisher: Cochin University of Science and Technology
Abstract: During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as strongly bonded two dimensional chalcogen-metal~chalcogen layers which are loosely coupled to one another by the weak ven der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and SnSe2). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystal structure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. A tin atom is surrounded by six chalcogen atoms octahedrally.In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding.
Description: Department of Physics, Cochin University of Science and Technology
URI: http://dyuthi.cusat.ac.in/purl/3298
Appears in Collections:Faculty of Sciences

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