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Please use this identifier to cite or link to this item: http://dyuthi.cusat.ac.in/purl/2595

Title: Photoacoustic measurement of transport properties in doped GaAs epitaxial layers
Authors: Sajan, D George
Vallabhan, C P G
Nampoori, V P N
Radhakrishnan, Dilna S P
Technology
Keywords: 66.30Xj
71.55.Eq
72.20.Jv
73.61.Ey
78.20.Hp
Issue Date: 2003
Publisher: WILEY-VCH Verlag
Abstract: The photoacoustic technique under heat transmission configuration is used to determine the effect of doping on both the thermal and transport properties of p- and n-type GaAs epitaxial layers grown on GaAs substrate by the molecular beam epitaxial method. Analysis of the data is made on the basis of the theoretical model of Rosencwaig and Gersho. Thermal and transport properties of the epitaxial layers are found by fitting the phase of the experimentally obtained photoacoustic signal with that of the theoretical model. It is observed that both the thermal and transport properties, i.e. thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time, depend on the type of doping in the epitaxial layer. The results clearly show that the photoacoustic technique using heat transmission configuration is an excellent tool to study the thermal and transport properties of epitaxial layers under different doping conditions.
URI: http://dyuthi.cusat.ac.in/purl/2595
ISSN: 1521-396X
Appears in Collections:Dr. V P N Nampoori

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