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Please use this identifier to cite or link to this item: http://purl.org/purl/2519

Title: Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors
Authors: Saji, K J
Dr.Jayaraj, M K
Keywords: Amorphous Semiconductors
Amorphous Oxide Thin Film Transistors
Thin Film Transistors
Pulsed Laser Deposition
Issue Date: Oct-2008
Publisher: Cochin University of Science & Technology
Abstract: This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for TFT applications. Amorphous materials are promising in achieving better device performance on temperature sensitive substrates compared to polycrystalline materials. Most of these amorphous oxides are multicomponent and as such there exists the need for an optimized chemical composition. For this we have to make individual targets with required chemical composition to use it in conventional thin film deposition techniques like PLD and sputtering. Instead, if we use separate targets for each of the cationic element and if separately control the power during the simultaneous sputtering process, then we can change the chemical composition by simply adjusting the sputtering power. This is what is done in co-sputtering technique. Eventhough there had some reports about thin film deposition using this technique, there was no reports about the use of this technique in TFT fabrication until very recent time. Hence in this work, co-sputtering has performed as a major technique for thin film deposition and TFT fabrication. PLD were also performed as it is a relatively new technique and allows the use high oxygen pressure during deposition. This helps to control the carrier density in the channel and also favours the smooth film surface. Both these properties are crucial in TFT.Zinc tin oxide material is interesting in the sense that it does not contain costly indium. Eventhough some works were already reported in ZTO based TFTs, there was no systematic study about ZTO thin film's various optoelectronic properties from a TFT manufacturing perspective. Attempts have made to analyse the ZTO films prepared by PLD and co-sputtering. As more type of cations present in the film, chances are high to form an amorphous phase. Zinc indium tin oxide is studied as a multicomponent oxide material suitable for TFT fabrication.
Description: Department of Physics, Cochin University of Science and Technology
URI: http://dyuthi.cusat.ac.in/purl/2519
Appears in Collections:Faculty of Sciences

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