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Please use this identifier to cite or link to this item: http://dyuthi.cusat.ac.in/purl/2486

Title: Photoacoustic investigation of intrinsic and extrinsic Si
Authors: Sajan, D George
Aneeshkumar, B
Radhakrishnan, P
Nampoori, V P N
Vallabhan, C P G
Technology
Keywords: photoacoustics
semiconductors
thermal and transport properties
Issue Date: 2004
Publisher: Society of Photo-Optical Instrumentation Engineers
Abstract: An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.
URI: http://dyuthi.cusat.ac.in/purl/2486
Appears in Collections:Dr.C P Girijavallabhan

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