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Please use this identifier to cite or link to this item: http://purl.org/purl/2411

Title: Photoacoustic studies on n-type InP
Authors: Nibu, A George
Vallabhan, C P G
Nampoori, V P N
Radhakrishnan, P
Technology
Keywords: photoacoustic and photothermal science and engineering
indium phosphide
heat diffusion in semiconductors
Issue Date: Jan-2002
Publisher: Society of Photo-Optical Instrumentation Engineers
Abstract: We discuss an open photoacoustic cell study on sulfer-doped n-type InP wafer. The thermal diffusivity of the sample is evaluated from the phase data associated with the photoacoustic signal as a function of the modulation frequency under heat transmission configuration. Analysis is made on the basis of the Rosencwaig-Gersho theory and the results are compared with those from earlier reported photoacoustic studies of semiconductors. Our investigation clearly indicates that the instantaneous thermalization process is the major heat diffusion mechanism responsible for the photoacoustic signal generation in an InP sample.
URI: http://dyuthi.cusat.ac.in/purl/2411
Appears in Collections:Dr.C P Girijavallabhan

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