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Please use this identifier to cite or link to this item: http://dyuthi.cusat.ac.in/purl/1832

Title: Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique
Authors: Radhakrishnan, P
V P N Nampoori
Girijavallabhan, C P
Sajan, D George
Keywords: Thermal characterization
intrinsic and extrinsic InP
Photoacoustics
thermal diffusivity
Issue Date: 2-Apr-2003
Publisher: Journal of Physics D : Applied Physics, Institute of Physics Publishing
Citation: International School of Photonics, Cochin University of Science and Technology
Abstract: An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors
URI: http://dyuthi.cusat.ac.in/purl/1832
Appears in Collections:Dr.P Radhakrishnan

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