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Please use this identifier to cite or link to this item: http://dyuthi.cusat.ac.in/purl/1809

Title: Photothermal deflection measurement on heat transport in GaAs epitaxial layers
Authors: Radhakrishnan, P
V P N Nampoori
Girijavallabhan, C P
Sajan, D George
Keywords: Photothermal deflection
heat transport
GaAs epitaxial layers
Doping
thermal diffusivity
phonons
Issue Date: 2003
Publisher: Physical Review, American Physical Society
Citation: International School of Photonics, Cochin University of Science and Technology
Abstract: In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons
URI: http://dyuthi.cusat.ac.in/purl/1809
ISSN: Physical Review,B 68, 165319 (2003)
Appears in Collections:Dr.P Radhakrishnan

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