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Please use this identifier to cite or link to this item: http://purl.org/purl/1388

Title: A Comaparison Study of EM and Physical Equivalent Circuit Modeling for MIM CMOS Capacitors
Authors: Xiong,X Z
Fusco,V F
Keywords: Model
Metal-insulator-metal
CMOS capacitors
Issue Date: 5-Aug-2002
Publisher: Microwave and Optical Technology Letters
Abstract: In this Letter a new physical model for metal-insulatormetal CMOS capacitors is presented. In the model the parameters of the circuit are derived from the physical structural details. Physical behaviors due to metal skin effect and inductance have been considered. The model has been confirmed by 3D EM simulator and design rules proposed. The model presented is scalable with capacitor geometry, allowing designers to predict and optimize quality factor. The approach has been verified for MIM CMOS capacitors
URI: http://dyuthi.cusat.ac.in/purl/1388
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