| dc.contributor.author |
Radhakrishnan, P |
|
| dc.contributor.author |
V P N Nampoori |
|
| dc.contributor.author |
Girijavallabhan, C P |
|
| dc.contributor.author |
Sajan, D George |
|
| dc.date.accessioned |
2010-07-14T09:56:15Z |
|
| dc.date.available |
2010-07-14T09:56:15Z |
|
| dc.date.issued |
2003-04-02 |
|
| dc.identifier.citation |
International School of Photonics, Cochin University of Science and Technology |
en_US |
| dc.identifier.other |
J. Phys. D: Appl. Phys. 36 (2003) 990–993 |
|
| dc.identifier.other |
PII: S0022-3727(03)58837-4 |
|
| dc.identifier.uri |
http://dyuthi.cusat.ac.in/purl/1832 |
|
| dc.description.abstract |
An open photoacoustic cell operating in the low range of chopping
frequency has been employed to evaluate the thermal diffusivity values of
intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is
calibrated by the evaluation of thermal diffusivity value of pure Si and
GaAs. The present investigation shows that doped samples show a reduced
value for thermal diffusivity compared to intrinsic sample. From the
analysis of data it is also seen that nature of dopant clearly influences the
thermal diffusivity value of semiconductors. The results are explained in
terms of phonon assisted heat transfer mechanism in semiconductors |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Journal of Physics D : Applied Physics, Institute of Physics Publishing |
en_US |
| dc.subject |
Thermal characterization |
en_US |
| dc.subject |
intrinsic and extrinsic InP |
en_US |
| dc.subject |
Photoacoustics |
en_US |
| dc.subject |
thermal diffusivity |
en_US |
| dc.title |
Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique |
en_US |
| dc.type |
Working Paper |
en_US |