Girijavallabhan, C P; Radhakrishnan, P; V P N Nampoori; Geetha, K; Rajesh, M(Journal of Optics A: Pure and Applied Optics, Institute of Physics Publishing, February 24, 2004)
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Abstract:
We report the position dependent tuning of fluorescence emission from
rhodamine 6G doped polymethylmethacrylate film waveguide using a side
illumination technique. The transmitted fluorescence as a function of the
distance from the point of illumination is measured by translating the
waveguide horizontally across a monochromatic light source. This technique
has been utilized to characterize the optical loss in dye doped waveguides.
We observe that the optical loss coefficients for shorter and longer distances
of propagation through the dye doped waveguide are different. At longer
distance of propagation a decrease in optical loss coefficient is observed
Girijavallabhan, C P; Radhakrishnan, P; V P N Nampoori; Sajan, D George; Saravanan, S; Venkatachalam, S(Physical Review, American Physical Society, June 8, 2004)
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Abstract:
Thermal diffusivity of the composites of camphor sulphonic acid (CSA) doped polyaniline (PANI) and its
composites with cobalt phthalocyanine (CoPc) has been measured using open cell photoacoustic technique.
Analysis of the data shows that the effective thermal diffusivity value can be tuned by varying the relative
volume fraction of the constituents. It is seen that polaron assisted heat transfer mechanism is dominant in CSA
doped PANI and these composites exhibit a thermal diffusivity value which is intermediate to that of CSA
doped PANI and CoPc. The results obtained are correlated with the electrical conductivity and hardness
measurements carried out on the samples.
Sajan D, George; Aneeshkumar, B; Radhakrishnan, P; Nampoori, V P N; Vallabhan, C P G(Society of Photo-Optical Instrumentation Engineers, 2004)
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Abstract:
An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.