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Abstract:
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SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type,
stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N105/cm)
were deposited at substrate temperature of 375 °C. The role of substrate temperature in determining the
optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and
cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the
same substrate temperature of 375 °C, which facilitates sequential deposition of SnS homojunction. A
comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis,
scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements.
Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also
determined |