Photoacoustic measurement of transport properties in doped GaAs epitaxial layers

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Photoacoustic measurement of transport properties in doped GaAs epitaxial layers

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dc.contributor.author Sajan D, George
dc.contributor.author Vallabhan, C P G
dc.contributor.author Nampoori, V P N
dc.contributor.author Radhakrishnan, Dilna S P
dc.date.accessioned 2011-12-02T10:29:10Z
dc.date.available 2011-12-02T10:29:10Z
dc.date.issued 2003
dc.identifier.issn 1521-396X
dc.identifier.other phys. stat. sol. (a) 195, No. 2, 416– 421 (2003)
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/2595
dc.description.abstract The photoacoustic technique under heat transmission configuration is used to determine the effect of doping on both the thermal and transport properties of p- and n-type GaAs epitaxial layers grown on GaAs substrate by the molecular beam epitaxial method. Analysis of the data is made on the basis of the theoretical model of Rosencwaig and Gersho. Thermal and transport properties of the epitaxial layers are found by fitting the phase of the experimentally obtained photoacoustic signal with that of the theoretical model. It is observed that both the thermal and transport properties, i.e. thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time, depend on the type of doping in the epitaxial layer. The results clearly show that the photoacoustic technique using heat transmission configuration is an excellent tool to study the thermal and transport properties of epitaxial layers under different doping conditions. en_US
dc.description.sponsorship Cochin University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher WILEY-VCH Verlag en_US
dc.subject 66.30Xj en_US
dc.subject 71.55.Eq en_US
dc.subject 72.20.Jv en_US
dc.subject 73.61.Ey en_US
dc.subject 78.20.Hp en_US
dc.title Photoacoustic measurement of transport properties in doped GaAs epitaxial layers en_US
dc.type Working Paper en_US
dc.contributor.faculty Technology en_US
dc.identifier.url http://dx.doi.org/10.1002/pssa.200305943 en_US


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