Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

Dyuthi/Manakin Repository

Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

Show simple item record

dc.contributor.author Sajan D, George
dc.contributor.author Dilna, S
dc.contributor.author Prasanth, R
dc.contributor.author Radhakrishnan, P
dc.contributor.author Vallabhan, C P G
dc.contributor.author Nampoori, V P N
dc.date.accessioned 2011-11-04T03:50:35Z
dc.date.available 2011-11-04T03:50:35Z
dc.date.issued 2003
dc.identifier.other Opt. Eng. 42, 1476 (2003)
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/2479
dc.description.abstract We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho’s theory of the PA effect. The amplitude of the PA signal gives information about various heat generation mechanisms in semiconductors. The experimental data obtained from the measurement of the PA signal as a function of modulation frequency in a heat transmission configuration were fitted with the phase of PA signal obtained from the theoretical model evaluated by considering four parameters—viz., thermal diffusivity, diffusion coefficient, nonradiative recombination time, and surface recombination velocity—as adjustable parameters. It is seen from the analysis that the photoacoustic technique is sensitive to the changes in the surface states depend on the doping concentration. The study demonstrates the effectiveness of the photoacoustic technique as a noninvasive and nondestructive method to measure and evaluate the thermal and transport properties of epitaxial layers. en_US
dc.description.sponsorship Cochin University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher Society of Photo-Optical Instrumentation Engineers. en_US
dc.subject photoacoustics en_US
dc.subject semiconductors en_US
dc.subject thermal and transport properties en_US
dc.title Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers en_US
dc.type Working Paper en_US
dc.contributor.faculty Technology en_US
dc.identifier.url http://dx.doi.org/10.1117/1.1564101 en_US


Files in this item

Files Size Format View Description
Dyuthi-P0244.pdf 697.9Kb PDF View/Open PDF

This item appears in the following Collection(s)

Show simple item record

Search Dyuthi


Advanced Search

Browse

My Account