Photothermal deflection studies of GaAs epitaxial layers

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Photothermal deflection studies of GaAs epitaxial layers

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dc.contributor.author Nibu A, George
dc.contributor.author Vallabhan, C P G
dc.contributor.author Nampoori, V P N
dc.contributor.author Radhakrishnan, P
dc.date.accessioned 2011-11-03T10:41:08Z
dc.date.available 2011-11-03T10:41:08Z
dc.date.issued 2002-08
dc.identifier.other Applied Optics, Vol. 41, Issue 24, pp. 5179-5184 (2002)
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/2477
dc.description.abstract Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure. en_US
dc.description.sponsorship Cochin University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher Optical Society of America en_US
dc.subject Photothermal beam defiection en_US
dc.subject GaAs epitaxial double layer en_US
dc.title Photothermal deflection studies of GaAs epitaxial layers en_US
dc.type Working Paper en_US
dc.contributor.faculty Technology en_US
dc.identifier.url http://dx.doi.org/10.1364/AO.41.005179 en_US


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