Photoacoustic studies on n-type InP

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Photoacoustic studies on n-type InP

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dc.contributor.author Nibu A, George
dc.contributor.author Vallabhan, C P G
dc.contributor.author Nampoori, V P N
dc.contributor.author Radhakrishnan, P
dc.date.accessioned 2011-10-29T04:11:22Z
dc.date.available 2011-10-29T04:11:22Z
dc.date.issued 2002-01
dc.identifier.other Opt. Eng. 41(1) 251–254 (January 2002)
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/2411
dc.description.abstract We discuss an open photoacoustic cell study on sulfer-doped n-type InP wafer. The thermal diffusivity of the sample is evaluated from the phase data associated with the photoacoustic signal as a function of the modulation frequency under heat transmission configuration. Analysis is made on the basis of the Rosencwaig-Gersho theory and the results are compared with those from earlier reported photoacoustic studies of semiconductors. Our investigation clearly indicates that the instantaneous thermalization process is the major heat diffusion mechanism responsible for the photoacoustic signal generation in an InP sample. en_US
dc.description.sponsorship Cochin University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher Society of Photo-Optical Instrumentation Engineers en_US
dc.subject photoacoustic and photothermal science and engineering en_US
dc.subject indium phosphide en_US
dc.subject heat diffusion in semiconductors en_US
dc.title Photoacoustic studies on n-type InP en_US
dc.type Working Paper en_US
dc.contributor.faculty Technology en_US
dc.identifier.url doi:10.1117/1.1419023 en_US


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