Photoacoustic investigation of doped InP using open cell configuration

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Photoacoustic investigation of doped InP using open cell configuration

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dc.contributor.author Sajan D, George
dc.contributor.author Vallabhan, C P G
dc.contributor.author Heck, M
dc.contributor.author Radhakrishnan, P
dc.contributor.author Nampoori, V P N
dc.date.accessioned 2011-10-27T12:36:38Z
dc.date.available 2011-10-27T12:36:38Z
dc.date.issued 2002
dc.identifier.other Nondestructive Testing and Evaluation, 2002 Vol. 18 (2), pp. 75–82
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/2406
dc.description.abstract An open cell photoacoustic (PA) configuration has been employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data have been evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a reduced value for thermal diffusivity in comparison with intrinsic InP. We also observed that, while the phase of the PA signal varies linearly with the square root of chopping frequency for doped samples, the intrinsic material does not exhibit such behaviour in the experimental frequency range. These results have been interpreted in terms of the heat generation and phonon assisted heat diffusion mechanisms in semiconductors. en_US
dc.description.sponsorship Cochin University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher Taylor & Francis en_US
dc.subject Photoacoustic en_US
dc.subject Inp en_US
dc.subject Thermal Diffusivity en_US
dc.title Photoacoustic investigation of doped InP using open cell configuration en_US
dc.type Working Paper en_US
dc.contributor.faculty Technology en_US


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