Photothermal beam deflection for non-destructive evaluation of semiconductor thin films

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Photothermal beam deflection for non-destructive evaluation of semiconductor thin films

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dc.contributor.author Anita, Warrier R
dc.contributor.author Dr.Vijayakumar, K P
dc.date.accessioned 2011-10-17T09:27:28Z
dc.date.available 2011-10-17T09:27:28Z
dc.date.issued 2010-08
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/2368
dc.description Department of Physics, Cochin University of Science and Technology en_US
dc.description.abstract Non-destructive testing (NDT) is the use of non-invasive techniques to determine the integrity of a material, component, or structure. Engineers and scientists use NDT in a variety of applications, including medical imaging, materials analysis, and process control.Photothermal beam deflection technique is one of the most promising NDT technologies. Tremendous R&D effort has been made for improving the efficiency and simplicity of this technique. It is a popular technique because it can probe surfaces irrespective of the size of the sample and its surroundings. This technique has been used to characterize several semiconductor materials, because of its non-destructive and non-contact evaluation strategy. Its application further extends to analysis of wide variety of materials. Instrumentation of a NDT technique is very crucial for any material analysis. Chapter two explores the various excitation sources, source modulation techniques, detection and signal processing schemes currently practised. The features of the experimental arrangement including the steps for alignment, automation, data acquisition and data analysis are explained giving due importance to details.Theoretical studies form the backbone of photothermal techniques. The outcome of a theoretical work is the foundation of an application.The reliability of the theoretical model developed and used is proven from the studies done on crystalline.The technique is applied for analysis of transport properties such as thermal diffusivity, mobility, surface recombination velocity and minority carrier life time of the material and thermal imaging of solar cell absorber layer materials like CuInS2, CuInSe2 and SnS thin films.analysis of In2S3 thin films, which are used as buffer layer material in solar cells. The various influences of film composition, chlorine and silver incorporation in this material is brought out from the measurement of transport properties and analysis of sub band gap levels.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention. Chapter six thus elucidates the theoretical aspects of application of photothermal techniques for solar cell analysis. The experimental design and method for determination of solar cell efficiency, optimum load resistance and series resistance with results from the analysis of CuInS2/In2S3 based solar cell forms the skeleton of this chapter. en_US
dc.language.iso en en_US
dc.publisher Cochin University of Science & Technology en_US
dc.subject Photothermal beam deflection en_US
dc.subject non-destructive evaluation en_US
dc.subject semiconductor thin films en_US
dc.subject Instrumentation en_US
dc.subject absorber layer materials en_US
dc.subject buffer layer material en_US
dc.title Photothermal beam deflection for non-destructive evaluation of semiconductor thin films en_US
dc.type Thesis en_US
dc.contributor.faculty Science en_US


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