| Abstract: | The present study demonstrate the functional alterations of the GABAA and GABAB receptors and the gene expression during the regeneration of pancreas following partial pancreatectomy. The role of these receptors in insulin secretion and pancreatic DNA synthesis using the specific agonists and antagonists also are studied in vitro. The alterations of GABAA and GABAR receptor function and gene expression in the brain stem, crebellum and hypothalamus play an important role in the sympathetic regulation of insulin secretion during pancreatic regeneration. Previous studies have given much information linking functional interaction between GABA and the peripheral nervous system. The involvement of specific receptor subtypes functional regulation during pancreatic regeneration has not given emphasis and research in this area seems to be scarce. We have observed a decreased GABA content, down regulation of GABAA receptors and an up regulation of GABAB receptors in the cerebral cortex, brain stem and hypothalamus. Real Time-PCR analysis confirmed the receptor data in the brain regions. These alterations in the GABAA and GABAB receptors of the brain are suggested to govern the regenerative response and growth regulation of the pancreas through sympathetic innervation. In addition, receptor binding studies and Real Time-PCR analysis revealed that during pancreatic regeneration GABAA receptors were down regulated and GABAB receptors were up regulated in pancreatic islets. This suggests an inhibitory role for GABAA receptors in islet cell proliferation i.e., the down regulation of this receptor facilitates proliferation. Insulin secretion study during 1 hour showed GABA has inhibited the insulin secretion in a dose dependent manner in normal and hyperglycaemic conditions. Bicuculline did not antagonize this effect. GABAA agonist, muscimol inhibited glucose stimulated insulin secretion from pancreatic islets except in the lowest concentration of 1O-9M in presence of 4mM glucose.Musclmol enhanced insulin secretion at 10-7 and 10-4M muscimol in presence of 20mM glucose- 4mM glucose represents normal and 20mM represent hyperglycaemic conditions. GABAB agonist, baclofen also inhibited glucose induced insulin secretion and enhanced at the concentration of 1O-5M at 4mM glucose and at 10-9M baclofen in presence of 20mM glucose. This shows a differential control of the GABAA and GABAB receptors over insulin release from the pancreatic islets. During 24 hours in vitro insulin secretion study it showed that low concentration of GABA has inhibited glucose stimulated insulin secretion from pancreatic islets. Muscimol, the GABAA agonist, inhibited the insulin secretion but, gave an enhanced secretion of insulin in presence of 4mM glucose at 10-7 , 10-5 and 1O-4M muscimol. But in presence of 20mM glucose muscimol significantly inhibited the insulin secretion. GABAB agonist, baclofen also inhibited glucose induced insulin secretion in presence of both 4mM and 20mM glucose. This shows the inhibitory role of GABA and its specific receptor subtypes over insulin synthesis from pancreatic bete-islets. In vitro DNA synthesis studies showed that activation of GABAA receptor by adding muscimol, a specific agonist, inhibited islet DNA synthesis. Also, the addition of baclofen, a specific agonist of GABAB receptor resulted in the stimulation of DNA synthesis.Thus the brain and pancreatic GABAA and GABAB receptor gene expression differentially regulates pancreatic insulin secretion and islet cell proliferation during pancreatic regeneration. This will have immense clinical significance in therapeutic applications in the management of Diabetes mellitus. |
| Description: | Department of Biotechnology, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2341 |
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| Dyuthi-T0614.pdf | (7.755Mb) |
| Abstract: | The research work which was carried out to characterization of wastes from natural rubber and rubber wood processing industries and their utilization for biomethanation. Environmental contamination is an inevitable consequence of human activity. The liquid and solid wastes from natural rubber based industries were: characterized and their use for the production of biogas investigated with a view to conserve conventional energy, and to mitigate environmental degradation.Rubber tree (flevea brasiliensis Muell. Arg.), is the most important commercial source of natural rubber and in india. Recently, pollution from the rubber processing factories has become very serious due to the introduction of modern methods and centralized group processing practices.The possibility of the use of spent slurry as organic manure is discussed.l0 percent level of PSD, the activity of cellulolytic, acid producing,proteolytic, lipolytic and methanogenic bacteria were more in the middle stage of methanogenesis.the liquid wastes from rubber processing used as diluents in combination with PSD, SPE promoted more biogas production with high methane content in the gas.The factors that favour methane production like TS, VS, cellulose and hemicellulose degradation were favoured in this treatment which led to higher methane biogenesis.The results further highlight ways and means to use agricultural wastes as alternative sources of energy. |
| Description: | Department of Biotechnology, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3146 |
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| Dyuthi-T1120.pdf | (14.01Mb) |
| Abstract: | The present thesis is an attempt to understand the role of GABA, GABAA and GABAB receptors in the regulation of liver cell proliferation using in vivo and in vitro models. The work also focuses on the brain GABAergic changes associated with normal and neoplastic cell growth in liver and to delineate its regulatory function. The investigation of mechanisms involving mitogenic models without cell necrosis may contribute our knowledge about both on cell growth, carcinogenesis, liver pathology and treatment. Objectives of the present study are, to induce controlled liver cell proliferation by partial hepatectomy and lead nitrate administration and uncontrolled cell proliferation by N-nitrosodiethylamine treatment in male Wistar rats, the changes in the content of GABA, GABAA,GABAB in various rat brain regions. To study the GABAA and GABAB receptor changes in brain stem, hypothalamus, cerebellum and cerebral cortex during the active cortex during the period of active DNA synthesis in liver of different experimental groups. The changes in GABAA and GABAB receptor function of the brain stem, hypothalamus and cerebellum play an important role sympathetic regulation of cell proliferation and neoplastic growth in liver. The decrease in GABA content in brain stem, hypothalamus and cerebellum during regeneration and neoplasia in liver. The time course of brain GABAergic changes was closely correlated with that of heptic DNA synthesis. The functional significance of these changes was further explored by studying the changes in GABAA and GABAB receptors in brain. |
| URI: | http://dyuthi.cusat.ac.in/purl/940 |
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| Dyuthi-T0109.pdf | (3.037Mb) |
| Abstract: | The present study was designed to investigate the protective effect of glucose, oxygen and epinephrine resuscitation on impairment in the functional role of GABAergic, serotonergic, muscarinic receptors, PLC, BAX, SOD, CAT and GPx expression in the brain regions of hypoxia induced neonatal rats. Also, the role of hormones - Triiodothyronine (T3) and insulin, second messengers – cAMP, cGMP and IP3 and transcription factors – HIF and CREB in the regulation of neonatal hypoxia and its resuscitation methods were studied. Behavioural studies were conducted to evaluate the motor function and cognitive deficit in one month old control and experimental rats. The efficient and timely supplementation of glucose plays a crucial role in correcting the molecular changes due to hypoxia, oxygen and epinephrine. The sequence of glucose, epinephrine and oxygen administration at the molecular level is an important aspect of the study. The additive neuronal damage effect due to oxygen and epinephrine treatment is another important observation. The corrective measures by initial supply of glucose to hypoxic neonatal rats showed from the molecular study when brought to practice will lead to healthy intellectual capacity during the later developmental stages, which has immense clinical significance in neonatal care. |
| Description: | Department of Biotechnology, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2143 |
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| Dyuthi-T0505.pdf | (9.803Mb) |
| URI: | http://dyuthi.cusat.ac.in/purl/1689 |
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| Dyuthi-T0115.pdf | (4.224Mb) |
| Abstract: | The study deals with the generation of variability for salt tolerance in rice using tissue culture techniques. Rice is the staple food of more than half of the world’s population. The management of drought, salinity and acidity in soils are all energy intensive agricultural practices. The Genetic variability is the basis of crop improvement. Somaclonal and androclonal variation can be effectively used for this purpose. In the present study, eight isozymes were studied and esterase and isocitric dehydrogenase was found to have varietal specific, developmental stage specific and stress specific banding pattern in rice. Under salt stress thickness of bands and enzyme activity showed changes. Pokkali, a moderately salt tolerant variety, had a specific band 7, which was present only in this variety and showed slight changes under stress. This band was faint in tillering and flowering stage .Based on the results obtained in the present study it is suggested that esterase could possibly be used as an isozyme marker for salt tolerance in rice. Varietal differences and stage specific variations could be detected using esterase and isocitric dehydrogenase . Moreover somaclonal and androclonal variation could be effectively detected using isozyme markers. |
| URI: | http://dyuthi.cusat.ac.in/purl/915 |
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| Dyuthi-T0107.pdf | (4.505Mb) |
| Abstract: | This thesis entitled Geometric algebra and einsteins electron: Deterministic field theories .The work in this thesis clarifies an important part of Koga’s theory.Koga also developed a theory of the electron incorporating its gravitational field, using his substitutes for Einstein’s equation.The third chapter deals with the application of geometric algebra to Koga’s approach of the Dirac equation. In chapter 4 we study some aspects of the work of mendel sachs (35,36,37,).Sachs stated aim is to show how quantum mechanics is a limiting case of a general relativistic unified field theory.Chapter 5 contains a critical study and comparison of the work of Koga and Sachs. In particular, we conclude that the incorporation of Mach’s principle is not necessary in Sachs’s treatment of the Dirac equation. |
| Description: | Department of Mathematics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3114 |
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| Dyuthi-T1088.pdf | (432.6Kb) |
| URI: | http://dyuthi.cusat.ac.in/purl/5564 |
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| Dyuthi T-2606.pdf | (685.3Kb) |
| Description: | Department of Biotechnology, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/xmlui/purl/1983 |
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| Dyuthi-T0412.pdf | (2.497Mb) |
| Abstract: | the thesis entitled “Ground and Excited State Electron Transfer Reaction Between a few Anthracene Appended Tertiary Amines and Suitable Electron Acceptors” portrays our attempts to explore the solvent, concentration and temperature effect of the reaction between a few (anthracen-9- yl)methanamines with electron acceptors like DMAD, DBA and DBE. We have also studied the effect of solvent and percentage fluorescence quenching in the photoinduced electron transfer reactions of these ‘donor-spacer-acceptor’ systems. Finally we look in to the intramolecular electron transfer reactions of a few tertiary amine appended dibenzobarrelenes and bisdibenzobarrelenes |
| Description: | Department of Applied Chemistry, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/4625 |
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| Dyuthi-T1817.pdf | (6.400Mb) |
| Abstract: | The thesis presents the results of the investigations on the crystallisation ‘behaviour, detect structure end electrical properties of certain organic crystals---phthslic snhydride end potsssiun scid phthalate Hollow crystals of phthalic snhydride were grown from vapour. the norpholog of these hollow crystals were studied in detail and s. mechanism for their growth has been proposed. A closed crystal—vapour system was used to study the basal plane growth of the whiskers and the sequential growth, observed, confirmed the mechanism suggested for hollow crystals. The dendritic crystals of phthslic enhydride were grown, both iron the melt and solution. The observed morphologies of these dendrites ere described. Bpherulites of phthalic anhydride have been grown by the artificial initiation of nucleation, from melt and solution. The variation of the substructure oi’ these spherulites with the growth tenperature wee investigated. The spherulitic filll having ribbon substructure were etched to reveal dislocations. A mechanism for the formation of the observed etch pattern has been suggested. the slip occurring in these ribbons were studied and the results are presented |
| Description: | Department of physics, Cochin University of Science And Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3306 |
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| Dyuthi-T1280.pdf | (29.79Mb) |
| Abstract: | In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications. |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2773 |
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| Dyuthi-T0796.pdf | (2.873Mb) |
| Abstract: | The increasing interest in the interaction of light with electricity and electronically active materials made the materials and techniques for producing semitransparent electrically conducting films particularly attractive. Transparent conductors have found major applications in a number of electronic and optoelectronic devices including resistors, transparent heating elements, antistatic and electromagnetic shield coatings, transparent electrode for solar cells, antireflection coatings, heat reflecting mirrors in glass windows and many other. Tin doped indium oxide (indium tin oxide or ITO) is one of the most commonly used transparent conducting oxides. At present and likely well into the future this material offers best available performance in terms of conductivity and transmittivity combined with excellent environmental stability, reproducibility and good surface morphology. Although partial transparency, with a reduction in conductivity, can be obtained for very thin metallic films, high transparency and simultaneously high conductivity cannot be attained in intrinsic stoichiometric materials. The only way this can be achieved is by creating electron degeneracy in a wide bandgap (Eg > 3eV or more for visible radiation) material by controllably introducing non-stoichiometry and/or appropriate dopants. These conditions can be conveniently met for ITO as well as a number of other materials like Zinc oxide, Cadmium oxide etc. ITO shows interesting and technologically important combination of properties viz high luminous transmittance, high IR reflectance, good electrical conductivity, excellent substrate adherence and chemical inertness. ITO is a key part of solar cells, window coatings, energy efficient buildings, and flat panel displays. In solar cells, ITO can be the transparent, conducting top layer that lets light into the cell to shine the junction and lets electricity flow out. Improving the ITO layer can help improve the solar cell efficiency. A transparent ii conducting oxide is a material with high transparency in a derived part of the spectrum and high electrical conductivity. Beyond these key properties of transparent conducting oxides (TCOs), ITO has a number of other key characteristics. The structure of ITO can be amorphous, crystalline, or mixed, depending on the deposition temperature and atmosphere. The electro-optical properties are a function of the crystallinity of the material. In general, ITO deposited at room temperature is amorphous, and ITO deposited at higher temperatures is crystalline. Depositing at high temperatures is more expensive than at room temperature, and this method may not be compatible with the underlying devices. The main objective of this thesis work is to optimise the growth conditions of Indium tin oxide thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The films are also deposited on to flexible substrates by employing bias sputtering technique. The films thus grown were characterised using different tools. A powder x-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive x-ray analysis (EDX) and scanning electron microscopy (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UVVIS- NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using vander Pauw four probe technique. The plasma generated during the sputtering of the ITO target was analysed using Langmuir probe and optical emission spectral studies. |
| URI: | http://dyuthi.cusat.ac.in/purl/663 |
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| Dyuthi-T0330.pdf | (1.523Mb) |
| URI: | http://dyuthi.cusat.ac.in/purl/1102 |
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| Valsalakumari C K 1985.pdf | (1.834Mb) |
| Abstract: | During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as stronglybonded two dimensional chalcogen-metal-chalcogen layers which are loosely coupled to one another by the weak van der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and Snsea). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystalstructure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. Aitin atom is surrounded by six chalcogen atoms octahedrally. In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding. |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3361 |
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| Dyuthi-T1338.pdf | (8.485Mb) |
| Abstract: | During the past few decades, a wide spread interest in the structural, optical, electrical and other physical properties of the transition metal dichalcogenide layer compounds has evolved. The members of this family of compounds can be regarded as strongly bonded two dimensional chalcogen-metal~chalcogen layers which are loosely coupled to one another by the weak ven der Waal's forces. Because of this type of bonding, the crystals are easily cleavable along the basal plane and show highly anisotropic properties. This thesis contains the growth and the study of the physical properties of certain tin dichalcogenide crystals (SnS2 and SnSe2). Tin disulphide and tin diselenide crystallize in the hexagonal CdI2 type crystal structure. This structure consists of layers of tin atoms sandwiched between two layers of chalcogen atoms. A tin atom is surrounded by six chalcogen atoms octahedrally.In the layers the atoms are held together by covalent bonding and in between the layers there is van der Waal's bonding. |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3298 |
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| Dyuthi-T1267.pdf | (15.42Mb) |
| URI: | http://dyuthi.cusat.ac.in/purl/1107 |
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| George Peter 1987.pdf | (1.285Mb) |
| Abstract: | Over the past years there has been considerable interest in the growth of single crystals both from the point of view of basic research and technological application. With the revolutionary emergence of solid state electronics which is based on single crystal technolo8Ys basic and applied studies on crystal growth and characterization _have gained a-more significant role in material science. These studies are being carried out for single crystals not only of semiconductor and other electronic materials but also of metals and insulators. Many organic crystals belonging to the orthorhombic class exhibit ferroelectric, electrooptic, triboluminescent and piezoelectric properties. Diammonium Hydrogen Citrate (DAHC) crystals are reported to be piezoelectric and triboluminescent /1/. Koptsik et al. /2/ have reported the piezoelectric nature of Citric Acid Monohydrate (CA) crystals. And since not much work has been done on these crystals, it has been thought useful to grow and characterize these crystals. This thesis presents a study of the growth of these crystals from solution and their defect structures. The results of the microindentation and thermal analysis are presented. Dielectric, fractographic, infrared (IR) and ultraviolet (UV) studies of DAHC crystals are also reported |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/3560 |
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| Dyuthi-T1542.pdf | (5.593Mb) |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2135 |
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| Dyuthi-T0496.pdf | (4.844Mb) |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2136 |
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| Dyuthi-T0497.pdf | (3.650Mb) |
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