The effect of dopants on the microwave dielectric properties of Ba( Mgo.33Ta0.67)03 ceramics

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The effect of dopants on the microwave dielectric properties of Ba( Mgo.33Ta0.67)03 ceramics

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dc.contributor.author Surendran,K P
dc.contributor.author Sebastian,M T
dc.contributor.author Mohanan, P
dc.contributor.author Mohanan,Jacob V
dc.date.accessioned 2009-04-01T04:25:32Z
dc.date.available 2009-04-01T04:25:32Z
dc.date.issued 2005
dc.identifier.uri http://dyuthi.cusat.ac.in/purl/1489
dc.description.abstract The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1t3Tazt3)O3 (BMT) is investigated. It is found that dopants such as Sb,05, MnO, ZrO,, WO1, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed en_US
dc.language.iso en en_US
dc.publisher American Institute of Physics en_US
dc.subject Microwave dielectric properties en_US
dc.title The effect of dopants on the microwave dielectric properties of Ba( Mgo.33Ta0.67)03 ceramics en_US
dc.type Working Paper en_US


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    This collection consists of published and unpublished working papers of Electronics

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