Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by
12 pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at
13 different pressures. These heterojunctions were found to be rectifying with a
14 maximum forward-to-reverse current ratio of about 1,000 in the applied
15 voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was
16 found to depend on the ambient oxygen pressure during the growth of the ZnO
17 film. The current density–voltage characteristics and the variation of the
18 series resistance of the n-ZnO/p-Si heterojunctions were found to be in line
19 with the Anderson model and Burstein-Moss (BM) shift.