Now showing items 1-1 of 1
| Abstract: | The Young’s modulus and Poisson’s ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young’s modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young’s modulus of 280–290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E5146 GPa). For Poisson’s ratio, a value of n 50.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip–sample stiffness |
| URI: | http://dyuthi.cusat.ac.in/xmlui/purl/2029 |
| Files | Size |
|---|---|
| Young's modulus of Silicon...pdf | (90.78Kb) |
Now showing items 1-1 of 1
Dyuthi Digital Repository Copyright © 2007-2011 Cochin University of Science and Technology. Items in Dyuthi are protected by copyright, with all rights reserved, unless otherwise indicated.